Related papers: Magnetoelectric domain wall dynamics and its impli…
We present a theoretical study of spin-dependent transport through a ferromagnetic domain wall. With an increase of the number of components of the exchange coupling, we have observed that the variance of the conductance becomes half. As…
The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field…
Due to the difficulty in detecting and manipulating magnetic states of antiferromagnetic materials, studying their switching dynamics using electrical methods remains a challenging task. In this work, by employing heavy metal/rare…
We present an analytical calculation of the velocity of a single 180 degree domain wall in a magnetic structure with reduced thickness and/or lateral dimension under the combined action of an external applied magnetic field and an…
Domain walls in antiferromagnets under a spin-polarized current present dynamical behavior that is not observed in ferromagnets, and it is tunable by the current polarization. Precessional dynamics is obtained for perpendicular spin…
HfO2-based ferroelectric materials are promising for the next generation of memory devices, attracting significant attention. However, their potential applications are significantly limited by fatigue and imprint phenomena, which affect…
Domain walls in ferromagnetic nanowires are potential building-blocks of future technologies such as racetrack memories, in which data encoded in the domain walls are transported using spin-polarised currents. However, the development of…
The discovery and precise manipulation of atomic-size conductive ferroelectric domain defects, such as geometrically confined walls, offer new opportunities for a wide range of prospective electronic devices, and the so-called walltronics…
Magnetotransport measurements on small single crystals of Cr, the elemental antiferromagnet, reveal the hysteretic thermodynamics of the domain structure. The temperature dependence of the transport coefficients is directly correlated with…
Difference in density of states for the spin's majority and minority bands in a ferromagnet changes the electrostatic potential along the domains, introducing the discontinuities of the potential at domain boundaries. The value of…
Micromagnetic simulation is carried out to investigate the current-driven domain wall (DW) in a nanowire with perpendicular magnetic anisotropy (PMA). A stepped nanowire is proposed to pin DW and achieve high information storage capacity…
The dynamics of magnetic domain walls along ferromagnetic strips with spatially modulated perpendicular magnetic anisotropy is theoretically studied by means of micromagnetic simulations. Ferromagnetic layers with a periodic sawtooth…
Ferroelectric switching and nanoscale domain dynamics were investigated using atomic force microscopy on monocrystalline Pb(Zr0.2Ti0.8)O3 thin films. Measurements of domain size versus writing time reveal a two-step domain growth mechanism,…
Searching for new methods controlling antiferromagnetic (AFM) domain wall is one of the most important issues for AFM spintronic device operation. In this work, we study theoretically the domain wall motion of an AFM nanowire, driven by the…
In this paper, we present the dynamics and modeling of multi-domains in the ferroelectric FET (FeFET). Due to the periodic texture of domains, the electrostatics of the FeFET exhibit an oscillatory conduction band profile. To capture such…
Domains in BaTiO$_3$ induces a regular modulation of uniaxial magnetic anisotropy in CoFeB via an inverse magnetostriction effect. As a result, the domain structures of the CoFeB wedge film and BaTiO$_3$ substrate correlate fully and…
We report on the evolution of ferromagnetic domain walls during magnetization reversal in elastically coupled ferromagnetic-ferroelectric heterostructures. Using optical polarization microscopy and micromagnetic simulations, we demonstrate…
Unidirectional motion of magnetic domain walls is the key concept underlying next-generation domain-wall-mediated memory and logic devices. Such motion has been achieved either by injecting large electric currents into nanowires or by…
The direct current (d.c.) conductivity and emergent functionalities at ferroelectric domain walls are closely linked to the local polarization charges. Depending on the charge state, the walls can exhibit unusual d.c. conduction ranging…
Domain walls (DWs) in magnetic nanowires are promising candidates for a variety of applications including Boolean/unconventional logic, memories, in-memory computing as well as magnetic sensors and biomagnetic implementations. They show…