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Topological materials are often associated with exceptional thermoelectric properties. Orthorhombic BaMnSb2 is a topological semimetal consisting of alternating layers of Ba, Sb, and MnSb. A recent experiment demonstrates that BaMnSb2 has a…

Materials Science · Physics 2024-03-05 Yubi Chen , Rongying Jin , Bolin Liao , Sai Mu

Based on the concept of band bending at metal/semiconductor interfaces as an energy filter for electrons, we present a theory for the enhancement of the thermoelectric properties of semiconductor materials with metallic nanoinclusions. We…

Materials Science · Physics 2008-07-03 Sergey V. Faleev , François Léonard

The variation of the superconducting critical temperature Tc as a function of the pressure p in the magnesium diboride MgB2 has been studied in the framework of two-bands Eliashberg theory and traditional phonon coupling mechanism. I have…

Superconductivity · Physics 2015-06-24 G. A. Ummarino

We report on the impact of manganese doping at the iron sites in Gadolinium Iron Garnet (GdIG, Gd$_{3}$Fe$_{5}$O$_{12}$), employing temperature-dependent spin Seebeck effect and ferromagnetic resonance measurements. Our findings reveal a…

Strongly Correlated Electrons · Physics 2025-08-06 Anna Merin Francis , P. B. S. Murthykrishnan , Ratnamay Kolay , Ramesh Nath , Sunil Nair

We employ density functional theory to investigate the thermoelectric properties of electron and hole doped PtSb$_2$. Our results show that for doping of 0.04 holes per unit cell (1.5$\times10^{20}$ cm$^{-3}$) PtSb$_2$ shows a high Seebeck…

Materials Science · Physics 2014-02-19 Y. Saeed , N. Singh , Schwingenschlögl

The effect of doping with Ti, Ta, SiC in complex with synthesis temperature on the amount and distribution of structural inhomogeneities in MgB2 matrix of high-pressuresynthesized-materials (2 GPa) which can influence pining: higher borides…

In this work, thermoelectric properties of Al$_{1.2}$Fe$_2$B$_2$ compound were investigated over a temperature range from 300\,K to 773\,K. Al$_{1.2}$Fe$_2$B$_2$ compound was produced by vacuum arc melting of Al, Fe, and B followed by…

Materials Science · Physics 2022-12-05 Duraisamy Sivaprahasam , Ashutosh Kumar , Babu Jayachandran , Raghavan Gopalan

Through a comprehensive free energy analysis, we demonstrate that finite temperature can simultaneously weaken superconductivity and mitigate spin polarization induced depairing, leading to potential non-monotonic temperature-dependent…

Superconductivity · Physics 2025-11-25 Xusheng Wang , Lianyi He , Shuai-hua Ji

The electronic structure of electron-doped polycrystalline Mg$_{1-x}$Al$_{x}$(B$_{1-y}$C$_{y}$)$_2$ was examined by electron energy-loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM) and first-principle…

Superconductivity · Physics 2007-05-23 R. F. Klie , J. C. Zheng , Y. Zhu , A. J. Zambano , L. D. Cooley

The pressure dependence of the resistivity and structure of La0.60Y0.07Ca0.33MnO3 has been explored in the pressure range from 1 atm to ~7 GPa. The metal to insulator transition temperature (TMI) was found to reach a maximum and the…

Materials Science · Physics 2009-11-07 Congwu Cui , Trevor A. Tyson , Zhong Zhong , Jeremy P. Carlo , Yuhai Qin

Transport and magnetic properties have been systematically investigated for SmMnAsO_{1-x} with controlled electron-doping. As the electron band-filling is increased with the increase of oxygen deficiency (x), the resistivity monotonically…

Strongly Correlated Electrons · Physics 2015-05-28 Y. Shiomi , S. Ishiwata , Y. Taguchi , Y. Tokura

We report a detailed study of the electronic structure of the MgB$_{2}$ with different lattice constants by using the full-potential linearized augmented plane wave(FPLAPW) method. It is found that the lattice parameters have great effect…

Materials Science · Physics 2009-11-07 Xiangang Wan , Jinming Dong , Hongming Weng , D. Y. Xing

Abundant phenomena in CoCr2-xMnxO4 (x = 0 ~ 2) samples such as magnetic compensation, magnetostriction and exchange bias effect have been observed and investigated in this work. A structure transition from cubic to tetragonal symmetry has…

Materials Science · Physics 2013-10-21 H. G. Zhang , W. H. Wang , E. K. Liu , X. D. Tang , G. J. Li , J. L. Chen , H. W. Zhang , G. H. Wu

Weyl semimetals combine topological and semimetallic effects, making them candidates for interesting and effective thermoelectric transport properties. Here, we present experimental results on polycrystalline NbP, demonstrating the…

The effect of Ge substitution for Si in SmMMn2Si2-xGex compounds has been studied. The Sm ordering temperature is found to be much larger in the compound with x=2, as compared to the compounds with x=0 and 1. The increase in the intra layer…

Materials Science · Physics 2009-11-13 Pramod Kumar , K. G. Suresh , A. K. Nigam , S. K. Malik

We have observed a strongly broadened Raman band of MgB2 that shows anomalously large pressure dependence of its frequency. This band and its pressure dependence can be interpreted as the E2g zone center phonon, which is strongly anharmonic…

There is evidence that magnetism can potentially increase the thermopower of materials, most likely due to magnon scattering, suggesting the incorporation of intrinsic magnetic semiconductors in non-magnetic thermoelectric materials. Here,…

By means of electronic Raman scattering we investigated the symmetry of the energy gap Delta(k), its temperature dependence and its variation with doping of well characterized Bi2Sr2CaCu2O8+delta single crystals. The oxygen content delta…

Condensed Matter · Physics 2009-10-22 A. Hoffmann , P. Lemmens , L. Winkeler , G. Guentherodt

Bulk n-type SrTiO3 (STO) has long been known to possess a superconducting ground state at an exceptionally dilute carrier density. This has raised questions about the applicability of the BCS-Eliashberg paradigm with its underlying…

Superconductivity · Physics 2025-03-14 Minwoo Park , Suk Bum Chung

Thermoelectric properties of the chemically-doped intermetallic narrow-band semiconductor FeGa3 are reported. The parent compound shows semiconductor-like behavior with a small band gap (Eg = 0.2 eV), a carrier density of ~ 10(18) cm-3 and,…

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