Related papers: Electrical tuning of Rashba spin-orbit interaction…
We report on an experimental study of the spin-orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer characteristic measurements show that independent tunings of the…
A key concept in the emerging field of spintronics is the gate voltage or electric field control of spin precession via the effective magnetic field generated by the Rashba spin orbit interaction. Here, we demonstrate the generation and…
Manipulating the electron spin with the aid of spin-orbit coupling (SOC) is an indispensable element of spintronics. Electrostatically gating a material with strong SOC results in an effective magnetic field which can in turn be used to…
We develop an InAs nanowire gate-all-around field-effect transistor using a transparent conductive zinc oxide (ZnO) gate electrode, which is in-situ atomic layer deposited after growth of gate insulator of Al2O3. We perform…
We use $\vec{k}\cdot\vec{p}$ theory to estimate the Rashba spin-orbit coupling (SOC) in large semiconductor nanowires. We specifically investigate GaAs- and InSb-based devices with different gate configurations to control symmetry and…
Spin-orbit interaction (SOI) offers a nonferromagnetic scheme to realize spin polarization through utilizing an electric field. Electrically tunable SOI through electrostatic gates have been investigated, however, the relatively weak and…
Spin-orbit interaction (SOI) is a fundamental component for electrically driven spin qubits and hybrid superconducting-semiconducting systems. In particular, Rashba SOI (RSOI) is a key mechanism enabling all-electrical spin manipulation…
The experimental assessment of the strength ($\alpha_R$) of the Rashba spin-orbit coupling is rather indirect and involves the measurement of the spin relaxation length from magnetotransport, together with a model of weak antilocalization.…
We consider a gated one-dimensional (1D) quantum wire disturbed in a contactless manner by an alternating electric field produced by a tip of a scanning probe microscope. In this schematic 1D electrons are driven not by a pulling electric…
The Rashba effect, which plays a crucial role in fundamental materials physics and potential spintronics applications, has been engineered in diverse systems, including semiconductor quantum wells, oxide heterostructures, metallic surfaces,…
Spin-orbit interaction (SOI) has been a key tool to steer and manipulate spin-dependent transport properties in two-dimensional electron gases. Here we demonstrate how spin currents can be created and efficiently read out in nano- or…
We investigate theoretically the spin-polarized electron transport for a wide-narrow-wide (WNW) quantum wire under the modulation of Rashba spin-orbit interaction (SOI). The influence of both the structure of the quantum wire and the…
Semiconductor nanowires featuring strong spin-orbit interactions (SOI), represent a promising platform for a broad range of novel technologies, such as spintronic applications or topological quantum computation. However, experimental…
Spin-orbit interaction (SOI) plays a key role in creating Majorana zero modes in semiconductor nanowires proximity coupled to a superconductor. We track the evolution of the induced superconducting gap in InSb nanowires coupled to a NbTiN…
We study the spin-orbit interaction (SOI) in InAs/ GaSb and InAs quantum wells. We show through temperature- and gate-dependent magnetotransport measurements of weak antilocalization that the dominant spin-orbit relaxation mechanism in our…
We study theoretically the low-energy hole states in Si, Ge, and Ge/Si core/shell nanowires (NWs). The NW core in our model has a rectangular cross section, the results for a square cross section are presented in detail. In the case of Ge…
A dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin-orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by…
We report the observation of Josephson diode effect (JDE) in hybrid devices made from semiconductor InAs nanosheets and superconductor Al contacts. By applying an in-plane magnetic field ($B_{\mathrm{xy}}$), we detect non-reciprocal…
We propose a fast and accurate spin initialization method for a single electron trapped in an electrostatic quantum dot. The dot is created in a nanodevice composed of a catalytically grown indium antimonide (InSb) nanowire and nearby gates…
We study the effects of spin-orbit interaction (SOI) on the current-induced motion of a magnetic (Bloch) domain wall in ultrathin ferromagnetic nanowires. The conspiracy of spin relaxation and SOI is shown to generate a novel strong…