Related papers: Wet etch methods for InAs nanowire patterning and …
An ion beam based dry etching method has been developed for progressive reduction of dimensions of prefabricated nanostructures. The method has been successfully applied to aluminum nanowires and aluminum single electron transistors (SET).…
We demonstrate a novel method for nanowire formation by natural selection during wet chemical etching in boiling Phosphoric acid. It is observed that wire lateral dimensions of sub-10 nm and lengths of 700 nm or more have been naturally…
The controlled growth of nanowires (NWs) with dimensions comparable to the Fermi wavelengths of the charge carriers allows fundamental investigations of quantum confinement phenomena. Here, we present studies of proximity-induced…
The scalability of quantum photonic integrated circuits opens the path towards large-scale quantum computing and communication. To date, this scalability has been limited by the stochastic nature of the quantum light sources. Moreover,…
Surface energies play a dominant role in the self-assembly of three dimensional (3D) nanostructures. In this letter, we show that using surfactants to modify surface energies can provide a means to externally control nanostructure…
We report on \textit{in situ} growth of crystalline Al and Nb shells on InAs nanowires. The nanowires are grown on Si(111) substrates by molecular beam epitaxy (MBE) without foreign catalysts in the vapor-solid mode. The metal shells are…
Narrow-bandgap III-V semiconductor nanowires (NWs) with a suitable band structure and strong light-trapping ability are ideal for high-efficiency low-cost solar water-splitting systems. However, due to their nanoscale dimension, they suffer…
InN nanowires were grown on Si<111> and Si<100> substrates by plasma-assisted molecular beam epitaxy using a thin AlN buffer layer at temperatures compatible with the thermal budget limitation imposed by Back-End-Of-Line processing.…
Silicon Carbide (SiC) is an outstanding material, not only for electronic applications, but also for projected functionalities in the realm of photonic quantum technologies, nano-mechanical resonators and photonics on-a-chip. For shaping 3D…
For electrons above a superfluid helium film suspended on a specially designed dielectric substrate, $z=h(y)$, we obtain that both the transverse, along $z$, and the lateral, along $y$, quantizations are strongly enhanced due to a strong…
Internal interfaces in Weyl semimetals (WSMs) are predicted to host distinct topological features that are different from the commonly studied external interfaces (crystal-to-vacuum boundaries). However, the lack of atomically sharp and…
Epitaxial semiconductor-superconductor hybrid materials are an excellent basis for studying mesoscopic and topological superconductivity, as the semiconductor inherits a hard superconducting gap while retaining tunable carrier density.…
Coupled colloidal quantum dot (CQD) dimers represent a new class of artificial molecules composed of fused core/shell semiconductor nanocrystals. The electronic coupling and wavefunction hybridization is enabled by the formation of an…
Motion of electrons can influence their spins through a fundamental effect called spin-orbit interaction. This interaction provides a way to electrically control spins and as such lies at the foundation of spintronics. Even at the level of…
We report the electronic characterization of mesoscopic Hall bar devices fabricated from coupled InAs/GaSb quantum wells sandwiched between AlSb barriers, an emerging candidate for two-dimensional topological insulators. The electronic…
Materials with tailored quantum properties can be engineered from atomic scale assembly techniques, but existing methods often lack the agility and accuracy to precisely and intelligently control the manufacturing process. Here we…
We propose that the recently realized T-shaped semiconductor quantum wires (T-wires) could be exploited as three-terminal quantum interference devices. T-wires are formed by intersecting two quantum wells (QWs). By use of a scattering…
Free-standing, interconnected metallic nanowire networks with density as low as 40 mg/cm^{3} have been achieved over cm-scale areas, using electrodeposition into polycarbonate membranes that have been ion-tracked at multiple angles.…
The capability to finely tailor material thickness with simultaneous atomic precision and non-invasivity would be useful for constructing quantum platforms and post-Moore microelectronics. However, it remains challenging to attain…
In this paper, we report on the impact of metal/polymer interfaces on the rectifying behavior of novel multi-segmented hybrid nanowires (HNWs) made of metallic and conjugated polymer (CP) segments. Using HNWs integrated in micromachined…