Related papers: Giant room temperature interface spin Hall and inv…

Spin Hall effect converts charge current to spin current, which can exert spin-torque to switch the magnetization of a nanomagnet. Recently, it is shown that the ratio of spin current to charge current using spin Hall effect can be made…

We propose a mechanism of intrinsic spin Hall effect (SHE). In this mechanism, local orbital angular momentum (OAM) induces electron position shift and couples with the bias electric field to generate orbital Hall effect (OHE). SHE then…

The spin currents generated by spin-orbit coupling (SOC) in the nonmagnetic metal layer or at the interface with broken inversion symmetry are of particular interest and importance. Here, we have explored the spin current generation…

Using circularly polarized light is an alternative to electronic ways for spin injection into materials. Spins are injected at a point of the light illumination, and then diffuse and spread radially due to the in-plane gradient of the spin…

The orbital-Hall effect (OHE), similarly to the spin-Hall effect (SHE), refers to the creation of a transverse flow of orbital angular momentum that is induced by a longitudinally applied electric field. For systems in which the spin-orbit…

We report a giant spin Hall effect (SHE) in {\beta}-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that…

We report the first measurement of the Spin Hall Effect of Light (SHEL) on an air-metal interface. The SHEL is a polarization-dependent out-of-plane shift on the reflected beam. For the case of metallic reflection with a linearly polarized…

The field of topological insulators (TI) was sparked by the prediction of the quantum spin Hall effect (QSHE) in time reversal invariant systems, such as spin-orbit coupled monolayer graphene. Ever since, a variety of monolayer crystals…

Recently a positive spin Hall angle (SHA) of 0.021, was observed experimentally in nonmagnetic CuIr alloys [Niimi et al., Phys. Rev. Lett. 106, 126601 (2011)] and attributed predominantly to an extrinsic skew scattering mechanism, while a…

Since spin currents can be generated, detected, and manipulated via the spin Hall effect (SHE), the design of strong SHE materials has become a focus in the field of spintronics. Because of the recent experimental progress also the spin…

Since the discovery of the giant magnetoresistance (GMR) effect the use of the intrinsic angular momentum of the electrons has opened up new spin based device concepts. The two channel model of spin-up and spin-down electrons with…

The magnetic spin Hall effect arises from a reactive counterpart of the dissipative spin response that is responsible for the ordinary spin Hall effect. This interpretation is supported by the dependence of spin Hall effect signals on the…

Electronic properties like current flow are generally independent of the electron's spin angular momentum, an internal degree of freedom present in quantum particles. The spin Hall effects (SHEs), first proposed 40 years ago, are an unusual…

We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/In_{x}Ga_{1-x}As heterostructures with n-type channel doping (Si) and highly doped Schottky tunnel barriers. A transverse spin current generated by an…

The spin Hall effect in a finite ballistic two-dimensional system with Rashba and Dresselhaus spin-orbit interaction is studied numerically. We find that the spin Hall conductance is very sensitive to the transverse measuring location, the…

Nonlinear Hall effect (NLHE) is a new type of Hall effect with wide application prospects. Practical device applications require strong NLHE at room temperature (RT). However, previously reported NLHEs are all low-temperature phenomena…

A recent experiment in CuBi alloys obtained a large spin Hall angle (SHA) of -0.24 (Niimi et al. Phys. Rev. Lett. 109, 156602 (2012)). We find that the SHA can be dramatically enhanced by Bi impurities close to the Cu surface. The…

Complex oxide heterostructures are hot candidates for post CMOS multi-functional devices. Especially in spintronics applications ferromagnetic oxides may play a key role because they can exhibit extraordinary high spin polarization. Indeed,…

Transient response of the spin Peltier effect (SPE) in a Pt/yttrium iron garnet junction system has been investigated by means of a lock-in thermoreflectance method. We applied an alternating charge current to the Pt layer to drive SPE…

We argue that spin-sensitive quasiparticle scattering may generate electron-hole imbalance in superconducting structures, such as, e.g., superconducting-normal hybrids with spin-active interfaces. We elucidate a transparent physical…