Related papers: Resonant 2D-2D tunneling with account for spin-orb…

We study ballistic transport of spin-polarized electrons through quantum wires in which the strength of the Rashba spin-orbit interaction (SOI) is spatially modulated. Subband mixing, due to SOI, between the two lowest subbands is taken…

A theoretical model is presented which allows to reconcile findings of scanning tunnelling spectroscopy for (Ga,Mn)As [Richardella et al. Science 327, 66 (2010)] with results for tunneling across (Ga,Mn)As thin layers [Ohya et al. Nature…

In layered semiconductors with spin-orbit interaction (SOI) a persistent spin helix (PSH) state with suppressed spin relaxation is expected if the strengths of the Rashba and Dresselhaus SOI terms, alpha and beta, are equal. Here we…

We present a review of features due to resonant tunnelling in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot as well as extrinsic effects,…

Magnetotunnelling spectroscopy of resonant tunnelling structures provides information on the nature of the two-dimensional electron gas in the well. We describe a model based on nonequilibrium Green's functions that allows for a…

Hole spins confined in semiconductor quantum dot systems have gained considerable interest for their strong spin-orbit interactions (SOIs) and relatively weak hyperfine interactions. Here we experimentally demonstrate a tunable SOI in a…

Quantum antidot, a small potential hill introduced into a two-dimensional electron system, presents an attractive tool to study quantum mechanics of interacting electrons.Here, we report experiments on electron resonant tunneling via a…

We present an in-depth study of the spin-orbit (SO) interactions occurring in inversion-asymmetric two-dimensional hole gases at semiconductor heterointerfaces. We focus on common semiconductors such as GaAs, InAs, InSb, Ge, and Si. We…

We present the findings of the 0.7(2e2/h) feature in the hole quantum conductance staircase that is caused by silicon one-dimensional channels prepared by the split-gate method inside the p-type silicon quantum well (SQW) on the n-type Si…

We present a bunch of novel phenomena stemming from the pair spin-orbit interaction (PSOI), which does not rely on structure inversion asymmetry but instead arises from Coulomb fields of interacting electrons in materials with a strong…

Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2…

Tunneling between two-dimensional electron layers with mutually correlated disorder potentials is studied theoretically. Due to this correlation, the diffusive eigenstates in different layers are almost orthogonal to each other. As a…

Spin-orbit interaction (SOI) leads to spin precession about a momentum-dependent spin-orbit field. In a diffusive two-dimensional (2D) electron gas, the spin orientation at a given spatial position depends on which trajectory the electron…

The coupling of spin and electronic degrees of freedom via the spin-orbit interaction (SOI) is an essential ingredient for many proposed future technologies. However, probing the strength and nature of SOI is a significant challenge,…

The band structure and magnetotransport of a two-dimensional electron gas (2DEG), in the presence of the Rashba (RSOI) and Dresselhaus (DSOI) terms of the spin-orbit interaction and of a perpendicular magnetic field, is investigated. Exact…

Recently, it has been known that the hidden Rashba (R-2) effect in two-dimensional materials gives rise to a novel physical phenomenon called spin-layer locking (SLL). However, not only has its underlying fundamental mechanism been unclear,…

The spin-polarized transport through a coherent strongly coupled double quantum dot (DQD) system is analyzed theoretically in the sequential and cotunneling regimes. Using the real-time diagrammatic technique, we analyze the current,…

The CV measurements and tunneling spectroscopy are used to study the ballistic transport of the spin-polarized holes by varying the value of the Rashba spin-orbit interaction (SOI) in the p-type quantum well prepared on the surface of the…

We report on an experimental study of the spin-orbit interaction (SOI) in an epitaxially grown free-standing InAs nanosheet in a dual-gate field-effect device. Gate-transfer characteristic measurements show that independent tunings of the…

Tunneling spectroscopy between parallel two-dimensional (2D) electronic systems provides a powerful method to probe the underlying electronic properties by measuring tunneling conductance. In this work, we present a theoretical framework…