Related papers: Linear magnetoresistance in compensated graphene b…
We report measurements of magnetoresistance in bilayer graphene as a function of gate voltage (carrier density) and temperature. We examine multiple contributions to the magnetoresistance, including those of weak localization (WL),…
We report an experimental study of carrier density (n), displacement field (D) and twist angle ({\theta}) dependence of temperature (T)-linear resistivity in twisted double bilayer graphene (TDBG). For a large twist angle…
We report on the observation of magnetoresistance oscillations in graphene p-n junctions. The oscillations have been observed for six samples, consisting of single-layer and bilayer graphene, and persist up to temperatures of 30 K, where…
We study spin dependent transport through a magnetic bilayer graphene nanojunction configured as two dimensional normal/ferromagnetic/normal structure where the gate-voltage is applied on the layers of ferromagnetic graphene. Based on the…
We investigate the transport properties of double-gated bilayer graphene nanoribbons at room temperature. The devices were fabricated using conventional CMOS-compatible processes. By analyzing the dependence of the resistance at the charge…
A drastic modification of electronic band structure is predicted in bilayer graphene when it is placed between two ferromagnetic insulators. Due to the exchange interaction with the proximate ferromagnet, the electronic energy dispersion in…
We have measured the magneto-resistance of freely suspended high-mobility bilayer graphene. For magnetic fields $B>1$ T we observe the opening of a field induced gap at the charge neutrality point characterized by a diverging resistance.…
Graphene [1] and its bilayer have generated tremendous excitement in the physics community due to their unique electronic properties [2]. The intrinsic physics of these materials, however, is partially masked by disorder, which can arise…
We demonstrate that the low-frequency resistance fluctuations, or noise, in bilayer graphene is strongly connected to its band structure, and displays a minimum when the gap between the conduction and valence band is zero. Using…
The recent discovery of a nonsaturating linear magnetoresistance in several correlated electron systems near a quantum critical point has revealed an interesting interplay between the linear magnetoresistance and the zero-field…
Two-component systems with equal concentrations of electrons and holes exhibit non-saturating, linear magnetoresistance in classically strong magnetic fields. The effect is predicted to occur in finite-size samples at charge neutrality in…
We present the magnetoresistance (MR) of highly doped monolayer graphene layers grown by chemical vapor deposition on 6H-SiC. The magnetotransport studies are performed on a large temperature range, from $T$ = 1.7 K up to room temperature.…
A positive, non-saturating and dominantly linear magnetoresistance is demonstrated to occur in the surface state of a topological insulator having a wavevector-linear energy dispersion together with a finite positive Zeeman energy…
A clear gate voltage tunable weak antilocalization and a giant magnetoresistance of 400 percent are observed at 1.9 K in single layer graphene with an out-of-plane field. A large magnetoresistance value of 275 percent is obtained even at…
The resistance of dual-gated bilayer graphene is measured as a function of temperature and gating electric fields in the Corbino geometry which precludes edge transport. The temperature-dependent resistance is quantitatively described by a…
Engineering devices with a large electrical response to magnetic field is of fundamental importance for a range of applications such as magnetic field sensing and magnetic read-heads. We show that a colossal non-saturating linear…
Twisted double bilayer graphene is a compensated semi-metal near the charge neutrality point with the presence of small electron and hole pockets in its band structure. We show that strong Coulomb attraction between the electrons and holes…
We report a magnetotransport study of an ultra-high mobility ($\bar{\mu}\approx 25\times 10^6$\,cm$^2$\,V$^{-1}$\,s$^{-1}$) $n$-type GaAs quantum well up to 33 T. A strong linear magnetoresistance (LMR) of the order of 10$^5$ % is observed…
We compute the magnetization of graphene in a magnetic field, taking into account for generality the possibility of a mass gap. We concentrate on the physical regime where quantum oscillations are not observed due to the effect of the…
Double layer graphene is a gapless semiconductor which develops a finite gap when the layers are placed at different electrostatic potentials. We study, within the tight-biding approximation, the electronic properties of the gaped graphene…