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Spin transport in superconductors offers a compelling platform to merge the dissipationless nature of superconductivity with the functional promise of spin-based electronics. A significant challenge in achieving spin polarisation in…
Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control…
Electron-magnon coupling at the interface between a normal metal and a magnetically ordered insulator modifies the electrical conductivity of the normal metal, an effect known as spin-Hall magnetoresistance. It can also facilitate…
We review the recently discovered spin Hall magnetoresistance (SMR) and related effects from a theoretical point of view. The SMR is observed in bilayers of a magnetic insulator and a metal, in which spin currents aregenerated in the normal…
Contrary to conventional wisdom that spin dynamics induced by current are exclusive to metallic magnets, we theoretically predict that such phenomena can also be realized in magnetic insulators, specifically in the magnetoelectric…
Orbital angular momentum has recently emerged as an important carrier of angular momentum in solids, offering new pathways for spin orbitronic functionality beyond conventional spin transport. Here, we investigate the orbital Hall effect…
In systems with strong spin-orbit coupling, the relationship between spin-transfer torque and the divergence of the spin current is generalized to a relation between spin transfer torques, total angular momentum current, and mechanical…
This paper reports on the improvement of the differential current gain in the spin-torque transistor based on two independent innovations, viz.the use of magnetic insulators and the spin Hall effect. Since, except for a few examples, spin…
Nanoelectronic devices that mimic the functionality of synapses are a crucial requirement for performing cortical simulations of the brain. In this work we propose a ferromagnet-heavy metal heterostructure that employs spin-orbit torque to…
According to the spin-torque model, current-driven magnetic dynamics in ferromagnetic multilayers is determined by the transfer of electron spin perpendicular to the layers' magnetizations. By separating the largest contributions to the…
We investigate the spin-dependent transport properties of a two-dimensional electron gas formed at oxides' interface in the presence of a magnetic field. We consider several scenarios for the oxides' properties, including oxides with…
The main obstacles in realizing diluted magnetic oxide (DMO) in spintronics are the unknown electronic structures associated with its high TC ferromagnetism and spin polarized current and how to manipulate desired electronic structures by…
The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin…
Control of magnetic domain wall movement by the spin-polarized current looks promising for creation of a new generation of magnetic memory devices. A necessary condition for this is the domain wall shift by a low-density current. Here I…
This chapter presents a review on spin transfer torque in magnetic tunnel junctions. In the first part, we propose an overview of experimental and theoretical studies addressing current-induced magnetization excitations in magnetic tunnel…
The combination of spin-orbit coupling driven effects and multiferroic tunneling properties was explored experimentally in thin Pt/Co/BTO/LSMO multilayers. The presence of a Pt heavy metal allows for the spin current-induced magnetization…
We study spin-orbit torques and charge pumping in magnetic quasi-one dimensional zigzag nanoribbons with hexagonal lattice, in the presence of large intrinsic spin-orbit coupling. Such a system experiences topological phase transition from…
At low temperatures, electrons in semiconductors are bound to shallow donor impurity ions, neutralizing their charge in equilibrium. Inelastic scattering of other externally-injected conduction electrons accelerated by electric fields can…
The magnetic spin Hall effect arises from a reactive counterpart of the dissipative spin response that is responsible for the ordinary spin Hall effect. This interpretation is supported by the dependence of spin Hall effect signals on the…
Spin-based memories are attractive for their non-volatility and high durability but provide modest resistance changes, whereas semiconductor logic transistors are capable of large resistance changes, but lack memory function with high…