Related papers: Sub-nanosecond time resolution detector based on A…

This paper presents the setup assembled to characterize and measure the spatial and timing resolutions of AC-coupled Low Gain Avalanche Diodes (AC-LGADs), using a 1060 nm laser source to deposit initial charges with a defined calibration…

The application of reach-through avalanche photodiodes (R'APD) as a photodetector for scintillator tiles has been investigated. The light collected by WLS fibers (0.84mm and 1mm diameter) embedded in the scintillator has been transmited to…

The dark count rate is one of the key properties of avalanche photodiodes (APDs) and silicon photomultipliers (SiPMs). Previous studies have reported discrete shifts in the dark count rate on short timescales ~10 ms to ~100 s with small…

We present the first operation of the Avalanche Photodiode (APD) from Hamamatsu to xenon scintillation light and to direct X-rays of 22.1 keV and 5.9 keV. A large non-linear response was observed for the direct X-ray detection. At 415 V APD…

Recent years getting progress in the area of micropixel avalanche photodiode makes them attractive as sensors for scintillation detectors. The performance of the scintillation detectors is strongly tied to the physical properties of MAPD.…

A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {\mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the…

We propose a novel design of superconducting nanowire avalanche photodetectors (SNAPs), which combines the advantages of multi-stage avalanche SNAPs to lower the avalanche current I_AV and that of series-SNAPs to reduce the reset time. As…

We report the design and performance of a time-resolved electron diffraction apparatus capable of producing intense bunches with simultaneously single digit micron probe size, long coherence length, and $200$ fs rms time resolution. We…

In the past few years, the need of measuring accurately the spatial and temporal coordinates of the particles generated in high-energy physics experiments has spurred a strong R\&D in the field of silicon sensors. Within these research…

Most active quench circuits used for single-photon avalanche detectors are designed either with discrete components which lack the flexibility of dynamically changing the control parameters, or with custom ASICs which require a long…

In the context of the CERN EP R&D on monolithic sensors and the ALICE ITS3 upgrade, the Tower Partners Semiconductor Co (TPSCo) 65 nm process has been qualified for use in high energy physics, and adopted for the ALICE ITS3 upgrade. An…

Superconducting nanowire single-photon detectors (SNSPDs) are the current leading technology for the detection of single-photons in the near-infrared (NIR) and short-wave infrared (SWIR) spectral regions, due to record performance in terms…

SiGe BiCMOS technology can be used to produce ultra-fast, low-power silicon pixel sensors that provide state-of-the-art time resolution even without an internal gain mechanism. The development of such sensors requires the identification of…

We demonstrate monolithically grown germanium-tin (GeSn) on silicon avalanche photodiodes (APDs) for infrared light detection. A relatively thinner Ge buffer design was adopted to allow effective photo carriers to transport from the GeSn…

We report operation and characterization of a lab-assembled single-photon detector based on commercial silicon avalanche photodiodes (PerkinElmer C30902SH, C30921SH). Dark count rate as low as 5 Hz was achieved by cooling the photodiodes…

Hybrid photon counting detectors (HPCDs) have unlocked new capabilities for x-ray-based measurements at synchrotrons around the world in the last 30 years. By leveraging independently optimized sensor and readout layers, they offer high…

Time-domain sampling of arbitrary electric fields with sub-cycle resolution enables a complete time-frequency analysis of a system's response to electromagnetic illumination. This provides access to dynamic information that is not provided…

We present the design and characterization of a large-area Cryogenic PhotoDetector (CPD) designed for active particle identification in rare event searches, such as neutrinoless double beta decay and dark matter experiments. The detector…

The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point,…

A near-infrared (NIR) enhanced silicon single-photon avalanche diode (SPAD) fabricated in a customized 0.13 $\mu$m CMOS technology is presented. The SPAD has a depleted absorption volume of approximately 15 $\mu$m x 15 $\mu$m x 18 $\mu$m.…