Related papers: 3-D IR imaging with uncooled GaN photodiodes using…
We demonstrate a photon-sensitive, three-dimensional camera by active near-infrared illumination and fast time-of-flight gating. It uses pico-second pump pulses to selectively up-convert the backscattered photons according to their…
Recent work on mid-infrared (MIR) detection through the process of non-degenerate two-photon absorption (NTA) in semiconducting materials has shown that wide-field MIR imaging can be achieved with standard Si cameras. While this approach…
We investigate the nonlinear optical response of a commercial extended-wavelength In$_{0.81}$Ga$_{0.19}$As photodetector. Degenerate two-photon absorption in the mid-infrared range is observed at room temperature using a quantum cascade…
Multiphoton absorption of wide band-gap semiconductors has shown great prospects in many fundamental researches and practical applications. With intensity-modulated femtosecond lasers by acousto-optic frequency shifters, photocurrents and…
Intersubband optoelectronic devices rely on transitions between quantum-confined electron levels in semiconductor heterostructures, which enables infrared (IR) photodetection in the 1-30 $\mu$m wavelength window with picosecond response…
An ultraviolet (UV) photodetector employing the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface as an interdigitated transducer (IDT) is characterized under optical stimulus. The 2DEG-IDT photodetector exhibits a…
The availability of high-frequency pulsed emitters in the $2-2.5\,\mu$m wavelength range paved the way for a wealth of new applications in ultrafast spectroscopy, free-space and fiber-optical communications, surveillance and recognition,…
The photosensitivity of silicon is inherently very low in the visible electromagnetic spectrum, and it drops rapidly beyond 800 nm in near-infrared wavelengths. Herein, we have experimentally demonstrated a technique utilizing…
Using an Electrically Focus Tunable Lens (EFTL), an integrating sphere and a tunable femtosecond-pulse laser (Mai Tai HP), we were able to measure the degenerate two-photon absorption coefficient (in transmission) of CdS and ZnSe in a long…
Thanks to intrinsically short electronic relaxation on the ps time scale, III-V semiconductor unipolar devices are ideal candidates for ultrahigh-speed operation at mid-infrared frequencies. In this work, antenna-coupled, GaAs-based multi…
This paper reports a comprehensive study of Si-based GeSn mid-infrared photodetectors, which includes: 1) the demonstration of a set of photoconductors with Sn compositions ranging from 10.5% to 22.3%, showing the cut-off wavelength has…
We report on the response of graphene to high intensity mid-IR radiation and show that graphene exhibits saturable absorption and significant two-photon absorption in the spectral region from 1.55 $\mu$m to 3.50 $\mu$m (0.35 eV to 0.80 eV).…
We report a systematic investigation of both three-photon absorption (3PA)spectra and wavelength dispersions of Kerr-type nonlinear refraction in wide-gap semiconductors. The Z-scan measurements are recorded for both ZnO and ZnS with…
The electronic properties of graphene are unique and are attracting increased attention to this novel 2-dimensional system. Its photonic properties are not less impressive. For example, this single atomic layer absorbs through direct…
We report a photon number resolving detector using two-dimensional electron gas (2DEG) based transistors. When the photon pulses impinge on the absorption region, the generated phonons dissipate ballistically in the 2DEG toward the trench…
We calculate the theoretical non-degenerate two photon absorption and three color injected current response tensors for bulk GaAs and Ge$_{1-x}$Sn$_x$ for a range of alloy compositions. In particular, by including a ''pump'' beam we compare…
Semiconductor lasers offer native bifunctionality enabling coherent light emission and linear photodetection. They can also operate as sensitive two-photon absorption detectors due to the third-order nonlinearity of the heterostructure…
Non-degenerate two-photon absorption (NTA) offers an attractive route for wide-field mid-infrared (MIR) imaging by mapping long wavelength information into the spectral detection windows of mature near-infrared detector technologies.…
We present femtosecond pump-probe measurements of the nondegenerate (1960$\,$nm excitation and 1176--1326$\,$nm probe) two-photon absorption spectra of 8 $\,$nm GaAs/12$\,$nm Al$_{0.32}$Ga$_{0.68}$As quantum well waveguides. Experiments…
Gallium nitride (GaN) has emerged as an essential semiconductor material for energy-efficient lighting and electronic applications owing to its large direct bandgap of 3.4 eV. Present GaN/AlGaN heterostructures seemingly feature an…