Related papers: Bulk and sub-surface donor bound excitons in silic…
The Coulomb interaction between the two protons is included in the calculation of proton-deuteron breakup and of three-body electromagnetic disintegration of ${}^3\mathrm{He}$. The hadron dynamics is based on the purely nucleonic…
Excitons are electron-hole pairs appearing below the band gap in insulators and semiconductors. They are vital to photovoltaics, but are hard to obtain with time-dependent density-functional theory (TDDFT), since most standard…
Recent advances in the characterization of hexagonal-diamond silicon (2H-Si) have shown that this material possesses remarkably different structural, electronic, and optical properties as compared to the common cubic-diamond (3C) polytype.…
We review the effects of Coulomb correlation on the linear and non-linear optical properties of semiconductor quantum wires, with emphasis on recent results for the bound excitonic states. Our theoretical approach is based on generalized…
The region surrounding the excitonic insulator phase is a three-component plasma composed of electrons, holes, and excitons. Due to the extended nature of the excitons, their presence influences the surrounding electrons and holes. We…
We theoretically investigate the scenario of a semiconductor quantum well in a microcavity, where the band structure is arranged such that optically excited electron-hole pairs cannot form Coulomb-bound excitonic states. However, it is…
We present an analysis of electron transport through two weakly coupled precision placed phosphorus donors in silicon. In particular, we examine the (1,1) to (0,2) charge transition where we predict a new type of current blockade driven…
The electron-hole states of semiconductor quantum dots are investigated within the framework of empirical tight-binding descriptions for Si, as an example of an indirect gap material, and InAs and CdSe as examples of typical III-V and II-VI…
We study the N-Delta-gamma transition in the Dyson-Schwinger approach. The nucleon and Delta baryons are treated as quark-diquark bound states, where the ingredients of the electromagnetic transition current are computed self-consistently…
We present a thorough analysis of the electron density distribution (shape) of two electrons, confined in the three-dimensional harmonic oscillator potential, as a function of the perpendicular magnetic field.Explicit algebraic expressions…
We demonstrate the fabrication of a single electron transistor device based on a single ultra-small silicon quantum dot connected to a gold break junction with a nanometer scale separation. The gold break junction is created through a…
A detailed study of total, Coulomb and nuclear breakup cross sections dependence on the projectile ground-state binding energy $\varepsilon_b$ is presented, by considering the $^8$Li+$^{12}$C and $^8$Li+$^{208}$Pb breakup reactions. To this…
We charge an individual donor with electrons stored in a quantum dot in its proximity. A Silicon quantum device containing a single Arsenic donor and an electrostatic quantum dot in parallel is realized in a nanometric field effect…
The nuclear spin state of a phosphorus donor ($^{31}$P) in isotopically enriched silicon-28 is an excellent host to store quantum information in the solid state. The spin's insensitivity to electric fields yields a solid-state qubit with…
Individual donors in silicon chips are used as quantum bits with extremely low error rates. However, physical realizations have been limited to one donor because their atomic size causes fabrication challenges. Quantum dot qubits, in…
The orbital, spin and valley degrees of freedom in silicon quantum dots support many modes of spin qubit operation. However, it is generally challenging to obtain information about the energy level spectrum over large ranges of parameter…
Atomic engineering in a solid-state material has the potential to functionalize the host with novel phenomena. STM-based lithographic techniques have enabled the placement of individual phosphorus atoms at selective lattice sites of silicon…
The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the…
We show that the charge transfer excitons in a Hubbard model system including nearest neighbor Coulomb interactions effectively attain some charge in doped systems and become visible in photoelectron and inverse photoelectron…
Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double…