Related papers: Bulk and sub-surface donor bound excitons in silic…
The T center in silicon has recently drawn a lot of attention for its potential in quantum information science. The sensitivity of the zero-phonon line (ZPL) to electrical field was recently investigated by a combination of different…
We carried out temperature-dependent (20 - 550 K) measurements of resonant inelastic X-ray scattering on LaCoO$_3$ to investigate the evolution of its electronic structure across the spin-state crossover. In combination with charge-transfer…
We study the dark excitons at the interface of sharp lateral heterostructure of two-dimensional transition metal dichalcogenides. By introducing a low-energy effective Hamiltonian model, we find the energy dispersion relation of exciton and…
Inter-valley interference between degenerate conduction band minima has been shown to lead to oscillations in the exchange energy between neighbouring phosphorus donor electron states in silicon \cite{Koiller02,Koiller02A}. These same…
We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a two-donor quantum dot, spin rotation can be driven by…
We investigate the electrical control of the exchange coupling (J) between donor bound electrons in silicon with a detuning gate bias, crucial for the implementation of the two-qubit gate in a silicon quantum computer. We find the…
We study single- and multi-quantum transitions of the nuclear spins of ionized arsenic donors in silicon and find quadrupolar effects on the coherence times, which we link to fluctuating electrical field gradients present after the…
A structural model of hydrogenated amorphous silicon containing an isolated dangling bond is used to investigate the effects of electron interactions on the electronic level splittings, localization of charge and spin, and fluctuations in…
The mechanisms of energy and spin transfer in quantum dot pairs coupled via the Coulomb interaction are studied. Exciton transfer can be resonant or phonon-assisted. In both cases, the transfer rates strongly depend on the resonance…
In this work, we investigate the ionization of silicon by electron impacts in hot plasmas. Our calculations of the cross sections and rates rely on the Coulomb-Born-Exchange, Binary-Encounter-Dipole and Distorted-Wave methods implemented in…
Recently, the celebrated Keldysh potential has been widely used to describe the Coulomb interaction of few-body complexes in monolayer transition-metal dichalcogenides. Using this potential to model charged excitons (trions), one finds a…
We report a successful measurement of the magnetic field-induced spin singlet-triplet transition in silicon-based coupled dot systems. Our specific experimental scheme incorporates a lateral gate-controlled Coulomb-blockaded structure in Si…
Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics…
Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of…
We unravel theoretically a key intrinsic relaxation mechanism among the low-lying singlet and triplet donor-pair states in silicon, an important element in the fast-developing field of spintronics and quantum computation. Despite the…
Donor electron spins in semiconductors make exceptional quantum bits because of their long coherence times and compatibility with industrial fabrication techniques. Despite many advances in donor-based qubit technology, it remains difficult…
The nucleus-nucleus interaction potentials in heavy-ion fusion reactions are extracted from the microscopic time-dependent Hartree-Fock theory for mass symmetric reactions $^{16}$O${}+^{16}$O, $^{40}$Ca${}+^{40}$Ca, $^{48}$Ca${}+^{48}$Ca…
We study the Coulomb-to-dipole transition which occurs when the separation $d$ of an electron-hole bilayer system is varied with respect to the characteristic in-layer distances. An analysis of the classical ground state configurations for…
Optical measurements of the real and imaginary frequency dependent conductivity of uncompensated n-type silicon are reported. The experiments are done in the quantum limit, $ \hbar\omega > k_{B}T$, across a broad doping range on the…
Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology…