Related papers: New spin injection scheme based on spin gapless se…
We demonstrate theoretically that spin dynamics of electrons injected into a GaAs semiconductor structure through a Schottky barrier possesses strong non-equilibrium features. Electrons injected are redistributed quickly among several…
In the active search for potentially promising candidates for spintronic applications, we focus on the intermetallic ferromagnetic Mn5Ge3 compound and perform accurate first-principles FLAPW calculations within density functional theory.…
We propose a spin transistor using only non-magnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in…
We present a first-principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds Ti$_2$MnIn and Ni$_2$MnIn and the III-V semiconductors, InSb and InAs, respectively. We use density…
Spin-based logic devices could operate at very high speed with very low energy consumption and hold significant promise for quantum information processing and metrology. Here, an in-house developed, experimentally verified, ensemble…
We study transport phenomena through a ballistic ferromagnet-superconductor-ferromagnet (F/S/F) junction, comparing the case in which the ferromagnetic order in the two F layers is of the standard Stoner type with the case where it is…
We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…
We study the electrical injection and detection of spin accumulation in lateral ferromagnetic metal-nonmagnetic metal-ferromagnetic metal (F/N/F) spin valve devices with transparent interfaces. Different ferromagnetic metals, permalloy…
The optical injection of charge and spin currents are investigated in Ge$_{1-x}$Sn$_{x}$ semiconductors as a function of Sn content. These emerging silicon-compatible materials enable the modulation of these processes across the entire…
Opposite to the common idea of a magnetic order requirement to obtain spin current propagation, materials with no magnetic ordering have also been revealed to be efficient spin conductors. In this work, we investigate the spin current…
We develop a Monte Carlo model to study injection of spin-polarized electrons through a Schottky barrier from a ferromagnetic metal contact into a non-magnetic low-dimensional semiconductor structure. Both mechanisms of thermionic emission…
Efficient injection of spin-polarized current into a semiconductor is a basic prerequisite for building semiconductor-based spintronic devices. Here, we use inelastic electron tunneling spectroscopy to show that the efficiency of…
In this paper, we discuss spin transport in topological insulator (TI) and diluted magnetic semiconductor (DMS) heterogeneous structures. In DMS / FM (Ferromagnetic Metal) heterogeneous structure, the spin injection efficiency changes…
Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the formation of a silicide at the ferromagnetic metal (FM)/silicon interface. In the present work, this "magnetically-dead" silicide (where…
Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few…
We have experimentally and theoretically investigated the spin injection/detection polarization in a Si-based ferromagnetic tunnel junction with an amorphous MgO layer, and demonstrated that the experimental features of the spin…
We study the electronic and magnetic properties of the interfaces between the half-metallic Heusler alloy NiMnSb and the binary semiconductors InP and GaAs using two different state-of-the-art full-potential \textit{ab-initio} electronic…
Realisation of practical spintronic devices relies on the ability to create and detect pure spin currents. In graphene-based spin valves this is usually achieved by injection of spin-polarized electrons from ferromagnetic contacts via a…
The spin mixing conductance (SMC) is a key quantity determining efficiency of spin transport across interfaces. Thus, knowledge of its precise value is required for accurate measurement of parameters quantifying numerous effects in…
We propose an electrically driven spin injector into normal metals and semiconductors, which is based on a magnetic tunnel junction (MTJ) subjected to a microwave voltage. Efficient functioning of such an injector is provided by…