Related papers: Biased doped silicene as a source for advanced ele…
We investigate experimentally a Bose Einstein condensate placed in a 1D optical lattice whose phase is modulated at a frequency large compared to all characteristic frequencies. As a result, the depth of the periodic potential is…
We present a tight-binding investigation of strained bilayer graphene within linear elasticity theory, focusing on the different environments experienced by the A and B carbon atoms of the different sublattices. We find that the…
We report many-body perturbation theory calculations of excited-state properties of distorted 1-T diamond-chain monolayer rhenium disulfide (ReS2) and diselenide (ReSe2). Electronic self-energy substantially enhances their quasiparticle…
Twisted graphene bilayers provide a versatile platform to engineer metamaterials with novel emergent properties by exploiting the resulting geometric moir\'{e} superlattice. Such superlattices are known to host bulk valley currents at tiny…
Stone-Wales (SW) defects are favorably existed in graphenelike materials with honeycomb lattice structure and potentially employed to change the electronic properties in band engineering. In this paper, we investigate structural and…
The supersolid phase of a dipolar Bose-Einstein condensate has an intriguing excitation spectrum displaying a band structure. Here, the dressing of an impurity in a one-dimensional dipolar supersolid with the excitations of the supersolid…
We investigate the gap in the single-electron spectrum of twisted bilayer graphene. In a perfect infinite lattice of a twisted bilayer, the gap varies exponentially in response to weak changes of the twist angle. Such a large sensitivity…
Applying long wavelength periodic potentials on quantum materials has recently been demonstrated to be a promising pathway for engineering novel quantum phases of matter. Here, we utilize twisted bilayer boron nitride (BN) as a moir\'e…
The precise positioning of dopant atoms within bulk crystal lattices could enable novel applications in areas including solid-state sensing and quantum computation. Established scanning probe techniques are capable tools for the…
Metasurfaces have revolutionized nonlinear and quantum light manipulation in the past decade, enabling the design of materials that can tune polarization, frequency, and direction of light simultaneously. However, tuning of metasurfaces is…
We theoretically study electronic states in graded-gap junctions of IV-VI compounds with band inversion. Using a two-band model within the ${\bf k}\cdot{\bf p}$ approximation and assuming that the gap and the gap centre present linear…
Silicon is a material whose technological application is well established, and obtaining this material in nanostructured form increases its possibility of integration in current technology. Silicene is a natural compatibility with current…
The ability to directly observe electronic band structure in modern nanoscale field-effect devices could transform understanding of their physics and function. One could, for example, visualize local changes in the electrical and chemical…
We analyze the electronic properties of bilayer graphene with Bernal stacking and a low concentration of adatoms. Assuming that the host bilayer lies on top of a substrate, we consider the case where impurities are adsorbed only on the…
Phase resonances in transmission compound structures with subwavelength slits produce sharp dips in the transmission response. For all equal slits, the wavelengths of these sharp transmission minima can be varied by changing the width or…
Binary alloy phases of the noble metals with main group elements are analyzed in relation to body centered cubic structure with orthorhombic and hexagonal distortions. Stability of these distorted phases is considered on the base of the…
The generalized tight-binding model has been developed to thoroughly explore the essential electronic and optical properties of AB-bt bilayer silicene. They are greatly diversified by the buckled structure, stacking configuration,…
Intrinsic bilayer graphene is a gapless semimetal. Under the application of a bias field it becomes a semiconductor with a direct band gap that is proportional to the applied field. Under a layer-asymmetric strain (where the upper layer…
Hole subband structure under strong band bending such a Pb on Si(111) and Indium on Si(111) have been investigated by angle-resolved photoelectron spectroscopy(ARPES). Energy levels of hole subband structure which indicate the quantized…
Anderson impurity problem is considered for a graphene bilayer subject to a gap-opening bias. In-gap localized states are produced even when the impurity level overlaps with the continuum of band electrons. The effect depends strongly on…