Related papers: Veselago lensing in graphene with a p-n junction: …
We study the scattering of graphene quasiparticles by topological defects, represented by holes, pentagons and heptagons. For the case of holes, we obtain the phase shift and found that at low concentration they appear to be irrelevant for…
We theoretically study the scattering of a plane wave of a ballistic electron on a circular n-p junction in single and bilayer graphene. We compare the exact wave function inside the junction to that obtained from a semiclassical formula…
The proposed semiclassical theory predicts two types of oscillations in the flow of current injected from a point source near a ballistic p-n junction in graphene in a strong magnetic field. One originates from the classical effect of…
We study the scattering of graphene quasiparticles by topological defects, represented by holes, pentagons and heptagons. For the case of holes, we obtain the phase shift and found that at low concentration they appear to be irrelevant for…
Creation of sharp lateral p-n junctions in graphene devices, with transition widths well below the Fermi wavelength of graphene charge carriers, is vital to study and exploit these electronic systems for electron-optical applications. The…
Electron-electron interactions play a critical role in many condensed matter phenomena, and it is tempting to find a way to control them by changing the interactions' strength. One possible approach is to place a studied system in proximity…
We study the effect of trigonal warping on the focussing of electrons by n-p junctions in graphene. We find that perfect focussing, which was predicted for massless Dirac fermions, is only preserved for one specific sample orientation. In…
Some properties of the electron-electron collision operator in graphene are analyzed along with the evaluation of collision rate. Monte Carlo simulations complete the study and highlight the non-negligible role of the electron-electron…
A p-n junction, induced in graphene by gating, works to contrast the edge states of electrons and holes on each side of it. In a magnetic field those edge states carry two species of persistent current, which are intimately tied to the…
Graphene is a promising candidate for optoelectronic applications. In this report, a double gated bilayer graphene FET has been made using a combination of electrostatic and electrolytic gating in order to form an abrupt p-n junction. The…
One of the unique features of graphene is that the Fermi wavelength of its charge carriers can be tuned electrostatically over a wide range. This allows in principle to tune the transparency of a pn-junction electrostatically, as this…
The electron scattering by the short-range defects in the monolayer graphene is considered in the framework of the flatland model. We analyze the effect of this scattering on the electronic resistivity of the monolayer graphene (direct…
We investigate the electron transport in smooth graphene pn junctions, generated by gradually varying electrostatic potentials. The numerically calculated coherent current flow patterns can be understood largely in terms of semi-classical…
In this paper we propose a new paradigm to create superlenses inspired by n-p-n junctions of graphene. We show that by adjoining a n-type region and a p-type region with a crystal dislocation, it is possible to mimic the interaction of…
The problem of electrostatic screening of a charged line by undoped or weakly doped graphene is treated beyond the linear-response theory. The induced electron density is found to be approximately doping independent, n(x)~(log x)^2/x^2, at…
It is shown that perfect imaging of a point source both in near- and far-field regions contradicts electrodynamics although ``superlensing'' is impossible only in the far-field region. These general statements are illustrated by detailed…
Matrix elements of electron-light interactions for armchair and zigzag graphene nanoribbons are constructed analytically using a tight-binding model. The changes in wavenumber ($\Delta n$) and pseudospin are the necessary elements if we are…
We provide a semiclassical description of the electronic transport through graphene n-p junctions in the quantum Hall regime. A semiclassical approximation for the conductance is derived in terms of the various snake-like trajectories at…
The paper reports a theoretical study of scattering of electrons by edges in graphene and its effect on Raman scattering. First, effective models are discussed for translationally invariant and rough edges. Second, they are used in a…
We study the interplay of Klein tunneling (= interband tunneling) between n-doped and p-doped regions in graphene and Andreev reflection (= electron-hole conversion) at a superconducting electrode. The tunneling conductance of an n-p-n…