Related papers: Stoner Magnetism in an Inversion Layer
Experimental results on the metal-insulator transitions and the anomalous properties of strongly interacting two-dimensional electron systems are reviewed and critically analyzed. Special attention is given to recent results for the…
We study transport phenomena through a ballistic ferromagnet-superconductor-ferromagnet (F/S/F) junction, comparing the case in which the ferromagnetic order in the two F layers is of the standard Stoner type with the case where it is…
In this work, we investigate the nature of magnetic interactions in intrinsic magnetic topological insulator Mn(Bi1-xSbx)2Te4 (MBST in short) systems, which possesses highly-ordered ferromagnetic septuple-layers (SLs), using two types of…
The ability to control the magnetic state provides a powerful means to tune the underlying band topology, enabling transitions between distinct electronic phases and the emergence of novel quantum phenomena. In this work, we address the…
We report studies of the magnetoresistance (MR) in a two-dimensional electron system in (100) Si-inversion layers, for perpendicular and parallel orientations of the current with respect to the magnetic field in the 2D-plane. The…
Transport properties of highly mobile 2D electrons are studied in symmetric GaAs quantum wells placed in titled magnetic fields. Quantum positive magnetoresistance (QPMR) is observed in magnetic fields perpendicular to the 2D layer.…
We describe spin transfer in a ferromagnet/normal metal/ferromagnet spin-valve point contact. Spin is transferred from the spin-polarized device current to the magnetization of the free layer by the mechanism of incoherent magnon emission…
Two-dimensional materials and their heterostructures have opened up new possibilities for magnetism at the nanoscale. In this study, we utilize first-principles simulations to investigate the structural, electronic, and magnetic properties…
We consider the effect of mobile ions on the applied potential needed to reorient a lamellar system of two different materials placed between two planar electrodes. The reorientation occurs from a configuration parallel to the electrodes…
Controlling the magnetic properties of nanosystems by an electric field offers a number of advantages for spintronics applications. Using the noncollinear Alexander-Anderson model, we have shown that the interaction of localized magnetic…
We measure thermodynamic magnetization of a low-disordered, strongly correlated two-dimensional electron system in silicon. Pauli spin susceptibility is observed to grow critically at low electron densities - behavior that is characteristic…
We study the effects of an in-plane magnetic field on the ground state properties of both gapless and gapped graphene sheets within Random Phase Approximation. The critical magnetic field which leads to a fully spin polarized phase…
We have studied an electron transport in inversion layers of high-mobility Si(100) samples. At high electron concentrations and temperatures below 4.2 K, two series of Shubnikov-de Haas oscillations have been observed. The temperature…
We report on quantum-interference measurements in top-gated Hall bars of monolayer graphene epitaxially grown on the Si face of SiC, in which the transition from negative to positive magnetoresistance was achieved varying temperature and…
The crystallization of charge carriers, dubbed the Wigner crystal, is anticipated at low densities in clean two-dimensional electronic systems (2DES). While there has been extensive investigation across diverse platforms, probing…
A two-staged, uniaxial magnetoresistive effect has been discovered in SrCo6O11 having a layered hexagonal structure. Conduction electrons and localized Ising spins are in different sublattices but their interpenetration makes the conduction…
Spin Hall magnetoresistance (SMR) is studied in metallic bilayers that consist of heavy metal (HM) layer and a ferromagnetic metal (FM) layer. We find nearly a ten-fold increase of SMR in W/CoFeB compared to previously studied…
We have measured the conductivity of high-mobility (001) Si metal-oxide-semiconductor field effect transistors (MOSFETs) over wide ranges of electron densities n=(1.8-15)x10^11cm^2, temperatures T=30mK-4.2K, and in-plane magnetic fields…
Perpendicularly magnetized CoFeB layers with ultra-thin non-magnetic insertion layers are very widely used as the electrodes in magnetic tunnel junctions for spin transfer magnetic random access memory devices. Exchange interactions play a…
The magnetic properties of the van der Waals magnetic topological insulators MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ are investigated by magneto-transport measurements. We evidence that the relative strength of the inter-layer exchange coupling J…