Related papers: Strain induced bang-gap engineering in layered $\t…
We study ballistic transport in bilayer graphene junctions and show how electrostatic gating, interlayer bias, and homogeneous strain provide complementary control over electron transmission. In the absence of strain, transport is governed…
The electronic bandgap of a material is often fixed after fabrication. The capability to realize on-demand and non-volatile control over the bandgap will unlock exciting opportunities for adaptive devices with enhanced functionalities and…
We use micro-Raman and photoluminescence (PL) spectroscopy at 300K to investigate the influence of uniaxial tensile strain on the vibrational and optoelectronic properties of monolayer and bilayer MoS2 on a flexible substrate. The initially…
The field of topological mechanics has recently emerged due to the interest in robustly transporting various types of energy in a flaw and defect-insensitive fashion. While there have been a significant number of studies based on…
The optical and electronic properties of multilayer transition metal dichalcogenides differ significantly from their monolayer counterparts due to interlayer interactions. The separation of individual layers can be tuned in a controlled way…
Strain engineering is a powerful strategy for tuning the optoelectronic properties in two-dimensional materials, yet the underlying mechanisms governing their strain response are often not fully elucidated. In this work, our first-principle…
The interlayer coupling of twisted bilayer graphene could markedly affect its electronic band structure. A current challenge required to overcome in experiment is how to precisely control the coupling and therefore tune the electronic…
We report about the effect of an applied external mechanical load on a periodic structure exhibiting band gaps induced by inertial amplification mechanism. If compared to the cases of Bragg scattering and ordinary local resonant…
Quantum systems in confined geometries are host to novel physical phenomena. Examples include quantum Hall systems in semiconductors and Dirac electrons in graphene. Interest in such systems has also been intensified by the recent discovery…
Recent band structure calculations have suggested the potential for band tuning in a chiral semiconductor, Ag$_3$AuTe$_2$, to zero upon application of negative strain. In this study, we report on the synthesis of polycrystalline…
Using the first-principles calculations based on density functional theory, we systematically investigate the strain-engineering (tensile and compressive strain) electronic, mechanical and transport properties of monolayer penta-SiC$_2$. By…
We consider electronic and optical properties of group III-Nitride monolayers using first-principle calculations. The group III-Nitride monolayers have flat hexagonal structures with almost zero planar buckling, $\Delta$. By tuning the…
Materials with flat electronic bands often exhibit exotic quantum phenomena owing to strong correlations. Remarkably, an isolated low-energy flat band can be induced in bilayer graphene by simply rotating the layers to 1.1$^{\circ}$,…
Atomically thin two-dimensional semiconducting transition metal dichalcogenides (TMDs) can withstand large levels of strain before their irreversible damage occurs. This unique property offers a promising route for control of the optical…
Before assessing the suitability of a semiconductor for specific applications, the first question to ask is whether it possesses a direct or indirect band gap. This distinction is fundamental, as the operation of devices such as…
We show that pressure applied to twisted WSe$_2$ can enhance the many-body gap and region of stability of a fractional Chern insulator at filling $\nu = 1/3$. Our results are based on exact diagonalization of a continuum model, whose…
Interlayer coupling is strongly implicated in the complex electronic properties of 1$T$-TaS$_2$ , but the interplay between this and electronic correlations remains unresolved. Here, we employ angle-resolved photoemission spectroscopy…
Nonmagnetic topological insulators (TIs) are known for their robust metallic surface/edge states that are protected by time-reversal symmetry, making them promising candidates for next-generation spintronic and nanoelectronic devices.…
Owing to the interaction between the layers, the twisted bilayer two-dimensional materials exhibit numerous unique optical and electronic properties different from the monolayer counterpart, and have attracted tremendous interests in…
The production of new sensors, transducers and electronic components can benefit from the possibility to alter the electronic transport of metal-semicondutor-metal (MSM) devices. 2D materials are extremely appealing for those new…