Related papers: Magneto-Electric Effect for Multiferroic Thin Film…
Magnetoelectric coupling in insulating multiferroic materials is invaluable for both fundamental research and multifunctional device applications. However, material realization remains a significant challenge. We employ first-principles…
By means of detailed Monte Carlo (MC) simulations, we have presented dynamic phase transition (DPT) properties of ferromagnetic thin-films. Thermal variations of surface, bulk and total dynamical order parameters (DOP) for a film and total…
We have developed an approach to determine the magnetoelastic coupling constant of magnetic layers in thin film heterostructures. The film is formed on a piezoelectric substrate between two interdigital transducers (IDT), a platform often…
The paper investigates the influence of the magnetic field on the behavior of 180-degree domain boundaries in a uniaxial ferromagnetic film with inhomogeneous magnetoelectric interaction. It is shown that, depending on the magnitude and…
We study ferroelectricity in thin films of pseudo-proper ferroelectrics such as the so-called spiral multiferroics. We find that this type of ferroelectricity stands better against depolarizing fields than conventional one. Its…
Understanding the effects of electron-electron interactions in half metallic magnets (HMs), which have band structures with one gapped spin channel and one metallic channel, poses fundamental theoretical issues as well as having importance…
We study theoretically the influence of the underlying domain microstructure on the electromechanical properties of ferroelectrics. Our calculations are based on a continuum approach that incorporates the long-range elastic and…
It was recently observed that materials showing most striking multiferroic phenomena are frustrated spin-density-wave magnets. We present a simple phenomenological theory, which describes the orientation of the induced electric polarization…
We developed numerical calculations to simulate the magnetoelectric coupling in multiferroic compounds, using the Monte Carlo technique. Two simple models were used to simulate the compounds. In the first one, the magnetic ions are…
Multiferroics, where two or more ferroic order parameters coexist, is one of the hottest fields in condensed matter physics and materials science[1-9]. However, the coexistence of magnetism and conventional ferroelectricity is physically…
Multiferroics have received intense attention due to their great application potential in multi-state information storage devices and new types of sensors. Coupling among ferroic orders such as ferroelectricity, (anti-)ferromagnetism,…
Magnetoelectric coupling in the polycrystalline antiferromagnets CuFe0.95Rh0.05O2 and CuFeO2 has been investigated. For both samples, electric polarization was observed in the absence of an applied external magnetic field demonstrating that…
The antiferromagnetic domain structure of a multiferroic has been investigated in the presence of a ferroelectric domain structure. It has been demonstrated that an inhomogeneous magnetoelectric (flexomagnetoelectric) interaction leads to…
The (inverse) magnetostrictive effect in ferromagnets couples the magnetic properties to the mechanical stress, allowing for an interaction between the magnetic and mechanical degrees of freedom. In this work, we present a time-integration…
The magnetoimpedance effect is a versatile tool to investigate ferromagnetic materials, revealing aspects on the fundamental physics associated to magnetization dynamics, broadband magnetic properties, important issues for current and…
The electric manipulation of antiferromagnets has become an area of great interest recently for zero-stray-field spintronic devices, and for their rich spin dynamics. Generally, the application of antiferromagnetic media for information…
This paper reports the development of a methodology combining microstrip ferromagnetic resonance (MS-FMR) and digital image correlation (DIC) in order to silmuteanously measure the voltage-induced strains and the magnetic resonance in…
Multiferroic (MF) devices based on simultaneous ferroelectric and ferromagnetic phenomena are considered to be promising candidates for future bi-functional micro/nano-electronics. The multiferroic phenomena in two-dimensional materials is…
Magnetoelastic and magnetoelectric coupling in the artificial multiferroic heterostructures facilitate valuable features for device applications such as magnetic field sensors and electric write magnetic-read memory devices. In a…
The ferroelectricity of multiferroics induced by spin order is commonly explained by considering either purely electronic or ion-displacement contribution. However, there is no general model which includes both effects simultaneously. Here,…