Related papers: Multiple-stable anisotropic magnetoresistance memo…
The study of magnetic phenomena in low-dimensional systems has largely explored after the discovery of two-dimensional (2D) magnetic materials, such as CrI3 and Cr2Ge2Te6 in 2017. These materials presents intrinsic magnetic order,…
Antiferromagnetic materials promise improved performance for spintronic applications, as they are robust against external magnetic field perturbations and allow for faster magnetization dynamics compared to ferromagnets. The direct…
Magnetic tunnel junction-based molecular spintronics devices (MTJMSDs) are designed by covalently connecting the paramagnetic molecules across two ferromagnets (FM) electrodes of a magnetic tunnel junction (MTJ). MTJMSD provides…
Resistivity measurements are widely exploited to uncover electronic excitations and phase transitions in metallic solids. While single crystals are preferably studied to explore crystalline anisotropies, these usually cancel out in…
All-solid-state nanoscale devices capable of efficiently controlling a heat flow are crucial for advanced thermal management technologies. Here we predict a magnon-driven magnetothermal resistance (mMTR) effect in multilayers of…
Due to the advent of antiferromagnetic (AF) spintronics there is a burgeoning interest in AF materials for a wide range of potential and actual applications. Generally, AFs are characterized via the ordering at the Neel temperature (TN)…
Altermagnets, a class of unconventional antiferromagnets where antiparallel spins are connected by combined rotational and translational symmetries, have recently emerged as promising candidates for spintronic applications, as they can…
Antiferromagnetic spintronics actively introduces new principles of magnetic memory, in which the most fundamental spin-dependent phenomena, i.e. anisotropic magnetoresistance effects, are governed by an antiferromagnet instead of a…
We report the observation of ferromagnetic resonance (FMR) and the determination of the magnetocrystalline anisotropy in (100)-oriented single-crystalline thin film samples of GaMnP with x=0.042. The contributions to the magnetic anisotropy…
Bistable nanomagnets store a binary bit of information. Exchange coupled nanomagnets can increase the thermal stability at low dimensions. Here we show that the antiferromagnetically (AFM) coupled nanomagnets can be highly stable at low…
Magnetic random-access memory (MRAM) driven by spin-transfer torque (STT) is a major contender for future memory applications. The energy dissipation involved in writing remains problematic, even with the advent of more efficient…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
In ferromagnetic alloys with shape memory large reversible strains can be obtained by rearranging the martensitic domain structure by a magnetic field. Magnetization through displacement of domain walls is possible in the presence of high…
We compare the magnetic and electronic configuration of single Mn atoms in molecular beam epitaxy (MBE) grown Bi$_2$Se$_3$ thin films, focusing on electron paramagnetic (ferromagnetic) resonance (EPR and FMR, respectively) and…
Here we report a custom design setup for the simultaneous measurement of magneto-resistance and MOKE imaging in longitudinal configuration for characterization of magnetic thin-films and sensors. The setup is designed so as to cope with a…
We present results of magnetization measurements showing that the magnetic response of the antiferromagnetic state of SmMn_2Ge_2 depends on the path used in the field(H)-temperature(T) phase space to reach this state. Distinct signature of…
Exploring anisotropy and diverse magnetization dynamics in specimens with vanishing magnetic moments presents a significant challenge using traditional magnetometry, as the low resolution of existing techniques hinders the ability to obtain…
Topological chiral antiferromagnets, such as Mn$_{3}$Sn, are emerging as promising materials for next-generation spintronic devices due to their intrinsic transport properties linked to exotic magnetic configurations. Here, we demonstrate…
The discovery of fascinating ways to control and manipulate antiferromagnetic materials have garnered considerable attention as an attractive platform to explore novel spintronic phenomena and functionalities. Layered antiferromagnets…
Using density functional theory calculations, we demonstrate that the effect of anisotropic magnetoresistance (AMR) can be enhanced by orders of magnitude with respect to conventional bulk ferromagnets in junctions containing molecules…