Related papers: Multiple-stable anisotropic magnetoresistance memo…
Antiferromagnets are magnetically ordered materials which exhibit no net moment and thus are insensitive to magnetic fields. Antiferromagnetic spintronics aims to take advantage of this insensitivity for enhanced stability, while at the…
The binary manganese aluminium (MnAl) alloy with L$1_0$ crystal structure is a promising rare earth element-free permanent magnetic material because of its exceptional magnetic properties. However, experimentally synthesizing it in a stable…
Multiferroic (MF) devices based on simultaneous ferroelectric and ferromagnetic phenomena are considered to be promising candidates for future bi-functional micro/nano-electronics. The multiferroic phenomena in two-dimensional materials is…
A negative-positive-negative switching behavior of magnetoresistance (MR) with temperature is observed in a ferromagnetic shape memory alloy Ni_1.75Mn_1.25Ga. In the austenitic phase between 300 and 120 K, MR is negative due to s-d…
Searching for novel antiferromagnetic materials with large magnetotransport response is highly demanded for constructing future spintronic devices with high stability, fast switching speed, and high density. Here we report a colossal…
Tunneling junctions containing no ferromagnetic elements have been fabricated and we show that distinct resistance states can be set by field cooling the devices from above the N\'eel along different orientations. Variations of the…
We demonstrate indirect electric-field control of ferromagnetic resonance (FMR) in devices that integrate the low-loss, molecule-based, room-temperature ferrimagnet vanadium tetracyanoethylene (V[TCNE]$_{x \sim 2}$) mechanically coupled to…
Electric field control of magnetic anisotropy in ferromagnets has been intensively pursued in spintronics to achieve efficient memory and computing devices with low energy consumption. Compared with ferromagnets, antiferromagnets hold huge…
The interplay between magnetic order and electronic topology in van der Waals materials enables extreme responses to external stimuli. The nodal-line semiconductor Mn3Si2Te6 exemplifies this, exhibiting colossal angular magnetoresistance…
Antiferromagnetic spintronics is an emerging field; antiferromagnets can improve the functionalities of ferromagnets with higher response times, and having the information shielded against external magnetic field. Moreover, a large list of…
Extremely large magnetoresistance (XMR) was recently discovered in WTe$_2$, triggering extensive research on this material regarding the XMR origin. Since WTe$_2$ is a layered compound with metal layers sandwiched between adjacent…
We have measured magnetic and transport response on the polycrystalline La$_{5/8-y}$Pr$_y$Ca$_{3/8}$MnO$_3$ ($y=0.30$, average grain size 2 microns) compound. In the temperature range where ferromagnetic metallic and insulating regions…
Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets that represent the more common form of magnetically ordered materials, have so far found less practical application beyond their use for…
The storage industry is moving toward emerging non-volatile memories (NVMs), including the spin-transfer torque magnetoresistive random-access memory (STT-MRAM) and the phase-change memory (PCM), owing to their high density and low-power…
A heat-assisted multiferroic solid-state memory design is proposed and analysed, based on a PbNbZrSnTiO3 antiferroelectric substrate and Ni81Fe19 magnetic free layer. Information is stored as magnetisation direction in the free layer of a…
A systematic study of the temperature and magnetic field dependence of the longitudinal and transverse resistivities of epitaxial thin films of magnetite (Fe3O4) is reported. The anisotropic magnetoresistance (AMR) and the planar Hall…
Ferromagnetic resonance (FMR) serves as a powerful probe of magnetization dynamics and anisotropy in percolating ferromagnets, where short-range interactions govern long-range magnetic order. We apply this approach to Ga$_{1-x}$Mn$_x$N ($x…
The field of spintronics has seen a surge of interest in altermagnetism due to novel predictions and many possible applications. MnTe is a leading altermagnetic candidate that is of significant interest across spintronics due to its layered…
Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge1-xMn xTe with x=0.14 grown by molecular beam epitaxy (MBE) on KCl (001) substrate with a thin PbTe buffer.…
Temperature-dependent resistivity and magnetoresistance are measured in bulk tetragonal phase of antiferromagnetic CuMnAs and the latter is found to be anisotropic both due to structure and magnetic order. We compare these findings to model…