Related papers: Spectral evolution with doping of an antiferromagn…
Electrostatic doping into an $n$-type Mott insulator Sm$_{2}$CuO$_{4}$ has been successfully achieved with use of the heterojunction with an $n$-type band semiconductor Nb-doped SrTiO$_{3}$. The junction exhibits rectifying current-voltage…
High-Tc superconductivity in cuprates is generally believed to arise from carrier doping an antiferromagnetic Mott (AFM) insulator. Theoretical proposals and emerging experimental evidence suggest that this process leads to the formation of…
Cluster dynamical mean field calculations based on 2, 4, 8 and 16 site clusters are used to analyze the doping-driven metal-insulator transition in the two dimensional Hubbard model. Comparison of results obtained on different clusters…
Understanding doped Mott insulators is a fundamental goal in condensed matter physics, with relevance to cuprate superconductors and other quantum materials. The doped Hubbard model minimally describes such systems, and has explicated some…
Disentangling the relationship between the insulating state with a charge gap and the magnetic order in an antiferromagnetic (AF) Mott insulator remains difficult due to inherent phase separation as the Mott state is perturbed. Measuring…
Superconductivity in underdoped cuprates emerges from an unusual electronic state characterised by nodal quasiparticles and an antinodal pseudogap. The relation between this state and superconductivity is intensely studied but remains…
The superconducting properties of a recently proposed phenomenological model for a weakly doped antiferromagnet are analyzed, taking into account fluctuations of the phase of the order parameter. In this model, we assume that the doped…
For YBa_2Cu_3O_{6+\delta} and Bi_2Sr_2CaCu_2O_8 superconductors, electronic Raman scattering from high- and low-energy excitations has been studied in relation to the hole doping level, temperature, and energy of the incident photons. For…
We derive the disorder vs. doping phase diagram of the doped Hubbard model via Dynamical Mean Field Theory combined with Typical Medium Theory, which allows the description of both Mott (correlation driven) and Anderson (disorder driven)…
In connection with recent experiments on excitation in which Mott insulators change to conductors, we study the properties of excited states beyond the Mott gap as quasi-stationary states for a two-dimensional Hubbard (t-t'-U) model at half…
We investigate the highly incoherent regime of hole-doped 2d Mott-Hubbard insulators at moderately small doping and temperatures T>=0.1J, where J is the exchange coupling. Within an extended dynamical mean-field theory of the t-J model and…
We investigate the nature of doped Mott insulators using exact diagonalization and density matrix renormalization group methods. Persistent spin currents are revealed in the ground state, which are concomitant with a nonzero total momentum…
Iridates such as Sr$_2$IrO$_4$ are of considerable interest owing to the formation of the Mott insulating state driven by a large spin-orbit coupling. However, in contrast to the expectation from the Nagaoka Theorem that a single doped hole…
Angular-resolved photoemission data on half-filled doped cuprate materials are compared with an exact-diagonalization analysis of the three-band Hubbard model, which is extended to the infinite lattice by means of a perturbation in the…
We present a systematic study of spin dynamics in a superconducting ground state, which itself is a doped-Mott-insulator and can correctly reduce to an antiferromagnetic (AF) state at half-filling with an AF long-range order (AFLRO). Such a…
We determine the spin and charge orders in the ground state of the doped two-dimensional (2D) Hubbard model in its simplest form, namely with only nearest-neighbor hopping and on-site repulsion. At half-filling, the ground state is known to…
We compute high-resolution angle-resolved photoemission spectroscopy of the Hubbard model using the unbiased determinant quantum Monte Carlo algorithm, revealing an asymmetry between electron and hole doping. Electron doping exhibits more…
We present a theoretical framework for a quantitative understanding of the full doping dependence of the optical spectra of the cuprates. In accord with experimental observations, the computed spectra show how the high-energy Mott features…
Single-particle spectral properties near the Mott transition in the one-dimensional Hubbard model are investigated by using the dynamical density-matrix renormalization group method and the Bethe ansatz. The pseudogap, hole-pocket behavior,…
We demonstrate in a simple model the surprising result that turning on an on-site Coulomb interaction U in a doped band insulator leads to the formation of a half-metallic state. In the undoped system, we show that increasing U leads to a…