Related papers: Fractional Quantum Hall Effect in Graphene: Quanti…
The Landau level spectra and the quantum Hall effect of ABA-stacked multilayer graphenes are studied in the effective mass approximation. The low-energy effective mass Hamiltonian may be partially diagonalized into an approximate…
Single-layer and Bilayer of graphene are new classes of two-dimensional electron systems with unconventional band structures and valley degrees of freedom. The ground states and excitations in the integer and fractional quantum Hall regimes…
Quantum Hall effect (QHE), the ground to construct modern conceptual electronic systems with emerging physics, is often much influenced by the interplay between the host two-dimensional electron gases and the substrate, sometimes predicted…
Quantum Hall plateaus at quarter fillings occur in GaAs wide quantum wells, hole-doped GaAs, and bilayer graphene. However, the interactions favoring incompressible states over compressible composite-Fermi liquids at such fillings are not…
It has been well-known that topological phenomena with fractional excitations, i.e., the fractional quantum Hall effect (FQHE) \cite{Tsui1982} will emerge when electrons move in Landau levels. In this letter, we report the discovery of the…
The recent discovery of fractional quantum Hall states in graphene raises the question of whether the physics of graphene and its bilayer offers any advantages over GaAs-based materials in exploring strongly-correlated states of…
We investigate integer and half-integer filling states (uniform and unidimensional stripe states respectively) for graphene using the Hartree-Fock approximation. For fixed filling factor, the ratio between the scales of the Coulomb…
Recent systematic measurements of the quantum well width dependence of the excitation gaps of fractional quantum Hall states in high mobility samples [Villegas Rosales {\it et al.}, Phys. Rev. Lett. {\bf 127}, 056801 (2021)] open the…
The fractional quantum Hall (FQH) effect is a macroscopic manifestation of strong electron-electron interactions. Even denominator FQH states (FQHSs) at half-filling are particularly interesting as they are predicted to host non-Abelian…
We investigate, using finite size numerical calculations, the spin-polarized fractional quantum Hall effect (FQHE) in the first excited Landau level (LL). We find evidence for the existence of an incompressible state at $\nu = \frac{7}{3} =…
Since the ground-breaking discovery of the quantum Hall effect, half-quantized quantum Hall plateaus have been some of the most studied and sought-after states. Their importance stems not only from the fact that they transcend the composite…
Monolayer graphene under a strong magnetic field near charge neutrality manifests the integer and fractional quantum Hall effects. Since only some of the four spin/valley flavors available to the electrons in each Landau level manifold are…
The fractional quantum Hall effect (FQHE) of topological surface-state particles under a tilted strong magnetic field is theoretically studied by using the exact diagonalization method. The Haldane's pseudopotentials for the Coulomb…
A proposal of the existence of an {\em Anomalous} phase ($\mathcal{A}$ phase) [https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.131.056202 Das et al., Phys. Rev. Lett. 131, 056202 (2023)] at the experimental range of moderate…
Interacting electrons in flat bands give rise to a variety of quantum phases. One fundamental aspect of such states is the ordering of the various flavours - such as spin or valley - that the electrons can undergo and the excitation…
Mixing of Landau levels has been understood to be essential in governing the nature of the ground state for the even-denominator fractional quantum Hall effect. The incompressibility of the ground state at filling factor $5/2$ in the strong…
We consider the fractional quantum Hall effect (FQHE) at the filling factor $8/17$, where signatures of incompressibility have been observed in the zeroth Landau level of bilayer graphene. We propose an Abelian state described by the…
The fractional quantum Hall effect (FQHE) is theoretically investigated, with numerical and algebraic approaches, in assemblies of a few spinful ultracold neutral fermionic atoms, interacting via repulsive contact potentials and confined in…
The electron-electron interaction in the Landau levels of bilayer graphene is markedly different from that of conventional semiconductors such as GaAs. We show that in the zeroth Landau level of bilayer graphene, in the orbital which is…
We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study…