Related papers: Engineering quantum dots for electrical control of…
Orbital energy splittings are important quantum dot parameters for the operation of hole spin qubits. They are known to depend on the lateral confinement of the quantum dots. However, when changing top, plunger gate voltages, which are the…
Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with…
We present a magneto-photoluminescence study of individual vertically stacked InAs/GaAs quantum dot pairs separated by thin tunnel barriers. As an applied electric field tunes the relative energies of the two dots, we observe a strong…
The effect of a gate voltage ($V_g$) on the spin-splitting of an electronic level in a quantum dot (QD) attached to ferromagnetic leads is studied in the Kondo regime using a generalized numerical renormalization group technique. We find…
The scalability of quantum dot based non-classical light sources relies on the control over their dissimilar emission energies. Electric fields offer a promising route to tune the quantum dot emission energy through the quantum-confined…
Ge/Si structures with vertically stacked quantum dots are simulated to implement the basic elements of a quantum computer for operation with electron spin states. Elastic-strain fields are simulated using the conjugate gradient method and…
We have investigated the structure of double quantum dots vertically coupled at zero magnetic field within local spin-density functional theory. The dots are identical and have a finite width, and the whole system is axially symmetric. We…
Multi-million atom simulations are performed to study stacking-angle ($\theta$) dependent strain profiles, electronic structure, and polarization-resolved optical modes from [110]-tilted quantum dot stacks (QDSs). Our calculations reveal…
Strong confinement of charges in few electron systems such as in atoms, molecules and quantum dots leads to a spectrum of discrete energy levels that are often shared by several degenerate quantum states. Since the electronic structure is…
We investigate the effect of uniaxial stress on InGaAs quantum dots in a charge tunable device. Using Coulomb blockade and photoluminescence, we observe that significant tuning of single particle energies (~ -0.5 meV/MPa) leads to variable…
The self-assembled quantum dot with lens domain has rotational symmetry but it is intrinsically asymmetric when the electron moves perpendicularly to its circular base, {\it i. e.} along the rotational axis. To characterize this asymmetry,…
Strongly-coupled quantum dot molecules (QDMs) are widely deployed in the design of a variety of optoelectronic, photovoltaic, and quantum information devices. An efficient and optimized performance of these devices demands engineering of…
We use atomistic tight-binding theory with a configuration interaction description of Coulomb and exchange effects to describe excitons in symmetric quantum dots in a vertical electric field. We show that field-induced manipulation of…
Self-assembled optically active quantum dot molecules (QDMs) allow the creation of protected qubits via singlet-triplet spin states. The qubit energy splitting of these states is defined by the tunnel coupling strength and is, therefore,…
We consider free electrons in rectangular quantum dots, with either hard wall boundary conditions or anharmonic confinement. In both cases, due to finite size effects, a homogeneous electric field applied along one of the rectangular axis…
Systems of photonic crystal cavities coupled to quantum dots are a promising architecture for quantum networking and quantum simulators. The ability to independently tune the frequencies of laterally separated quantum dots is a crucial…
We use an efficient projection scheme for the Fock operator to analyze the size dependence of silicon quantum dots (QDs) electronic properties. We compare the behavior of hybrid, screened hybrid and local density functionals as a function…
We use strain to statically tune the semiconductor band gap of individual InAs quantum dots (QDs) embedded in a GaAs photonic wire featuring very efficient single photon collection efficiency. Thanks to the geometry of the structure, we are…
Considering the increasing number of experimental results in the manufacturing process of quantum dots with different geometries, and the fact that most numerical methods that can be used to investigate quantum dots with non-trivial…
Tuning of gate-defined semiconductor quantum dots (QDs) is a major bottleneck for scaling spin qubit technologies. We present a deep learning (DL) driven, semantic-segmentation pipeline that performs charge auto-tuning by locating…