Related papers: Native point defects in CaS: A focus on doping lim…
We employ \textit{ab initio} calculations to investigate energetics of point defects in metastable rocksalt cubic Ta-N and Mo-N. Our results reveal a strong tendency to off-stoichiometry, i.e. defected structures are predicted to be more…
Several errors in Refs. [1, 2] are corrected related to the optical trapping potentials for a state-insensitive, compensated nanofiber trap for the D2 transition of atomic Cesium. Section I corrects our basic formalism in Ref. [1] for…
Inelastic scattering of visible light (Raman effect) offers a window into properties of correlated metals such as spin, electron and lattice dynamics as well as their mutual interactions. In this review we focus on electronic and spin…
Modifying the optoelectronic properties of nanostructured materials through introduction of dopant atoms has attracted intense interest. Nevertheless, the approaches employed are often trial and error, preventing rational design. We…
Recent advances in the characterization of hexagonal-diamond silicon (2H-Si) have shown that this material possesses remarkably different structural, electronic, and optical properties as compared to the common cubic-diamond (3C) polytype.…
We use angle-resolved photoemission spectroscopy applied to deeply underdoped cuprate superconductors Bi2Sr2(Ca,Y)Cu2O8 (Bi2212) to reveal the presence of two distinct energy gaps exhibiting different doping dependence. One gap, associated…
The development of defect populations after proton irradiation of n-type 4H-SiC and subsequent annealing experiments is studied by means of deep level transient (DLTS) and photoluminescence (PL) spectroscopy. A comprehensive model is…
Sn-based perovskites as low-toxic materials are actively studied for optoelectronic applications. However, their performance is limited by $p$-type self-doping, which can be suppressed by substitutional doping on the cation sites. In this…
We present small angle neutron scattering studies of the magnetic vortex lattice (VL) in Ca$_{0.04}$Y$_{0.96}$Ba$_{2}$Cu$_{3}$O$_{7}$ up to a field of 16.7 T, and Ca$_{0.15}$Y$_{0.85}$Ba$_{2}$Cu$_{3}$O$_{7}$ up to 25 T. We find that the…
We study the trapping of a ground-state cesium atom in a small region around the midpoint between two coupled identical parallel optical nanofibers. We suggest to use a blue-detuned guided light field in the odd $\mathcal{E}_z$-sine array…
We studied the effects of point defects and Hg impurities in the electronic properties of bismuth iodide (Bi$_4$I$_4$). Our transport measurements after annealing at different temperatures show that the resistivity of Bi$_4$I$_4$ depends on…
We investigate the dual roles of a cobalt impurity in the Ba-122 ferropnictide superconductor in the state with coexisting collinear spin density wave (SDW) order as a dopant and as a scattering center, using first principles electronic…
We report accurate energetics of defects introduced in GaN on doping with divalent metals, focussing on the technologically important case of Mg doping, using a model which takes into consideration both the effect of hole localisation and…
The carbon vacancy in $4H$-SiC is a powerful minority carrier recombination center and a major cause of degradation of SiC-based devices. Despite the extensiveness of the literature regarding the characterization and modeling of the defect,…
Robust control over the carrier type is fundamental for the fabrication of nanocrystal-based optoelectronic devices, such as the p-n homojunction, but effective incorporation of impurities in semiconductor nanocrystals and its…
A Hamiltonian H(\Gamma) applicable to cuprate HTS, with a doping dependent pairing interaction \Gamma(x) = V(x) + U(x), is linked to a Cu3d-O2p state probability model(SPM). A consequence of doping induced electron hopping, the SPM mandates…
Rare earth doping is an effective way to convert chemically stable oxides into multifunctional materials with coupled electronic, optical, and magnetic properties. We present first principles calculations of pristine and Tm3+ doped Ca2SnO4…
Deep defects in silicon carbide (SiC) possess atom-like electronic, spin and optical properties, making them ideal for quantum-computing and -sensing applications. In these applications, deep defects are often placed within fabricated…
The comprehensive research of the electronic structure, thermodynamic and electrical transport properties reveals the existence of inhomogeneous superconductivity due to structural disorder in Ca$_3$Rh$_4$Sn$_{13}$ doped with La…
Diamond's exceptional properties make it highly suited for applications in challenging radiation environments. Understanding radiation-induced damage in diamond is crucial for enabling its practical applications and advancing materials…