Related papers: Native point defects in CaS: A focus on doping lim…

The dependence of the superconducting gaps in epitaxial Ba(Fe_{1-x}Co_{x})_2As_2 thin films on the nominal doping x (0.04 \leq x \leq 0.15) was studied by means of point-contact Andreev-reflection spectroscopy. The normalized conductance…

Density functional theory based First Principles calculations were used to study the effect of Silicon (Si) doping on the structural, electronic and optical properties of CsCaI3. From our calculations, we predict that CsCaI3 can form stable…

Utilizing an exactly solvable Hubbard-like model that exhibits a pseudogap (PG) phase and a partially flat band, we perform self-consistent microscopic calculations of the superconductivity (SC) in cuprates, incorporating both thermal and…

Defects on surfaces of semiconductors have a strong effect on their reactivity and catalytic properties. The concentration of different charge states of defects is determined by their formation energies. First-principles calculations are an…

Sn$_{0.97-y}$Co$_{0.03}$Ni$_{y}$O$_{2}$ (0 $\leq y \leq$ 0.04) nanocrystals, with average crystallite size in the range of 7.3 nm ($y$=0.00) to 5.6 nm ($y$=0.04), have been synthesized using pH-controlled chemical co-precipitation…

We elucidate the effects of defect disorder and $e$-$e$ interaction on the spectral density of the defect states emerging in the Mott-Hubbard gap of doped transition-metal oxides, such as Y$_{1-x}$Ca$_{x}$VO$_{3}$. A soft gap of kinetic…

Measurements of the low-frequency (f<= 100 kHz) permittivity at T<= 160 K and dc resistivity (T<= 430 K) are reported for La(1-x)Ca(x)MnO(3) (0<= x<= 0.15). Static dielectric constants are determined from the low-T limiting behavior of the…

We use the Local Density Approximation in combination with the Dynamical Mean Field Theory to investigate intermediate energy properties of the copper oxides. We identify coherent and incoherent spectral features that results from doping a…

Tunneling measurements are performed on Ca-rich single crystals of Bi2Sr2CaCu2O8+d (Bi2212), with various oxygen doping levels, using a novel point contact method. At 4.2 K, SIN and SIS tunnel junctions are obtained with well-defined…

We present a temperature dependent photoluminescence study of silicon optical nanocavities formed by introducing point defects into two-dimensional photonic crystals. In addition to the prominent TO phonon assisted transition from…

The formation energies and transition energy levels of native defects in hexagonal BN have been studied by first-principles calculations based on hybrid density functional theory (DFT) together with an empirical dispersion correction of…

Measurements of optical properties at nanometre-level are of central importance for characterization of optoelectronic device. It was, however, hardly possible for the conventional light-probe measurements to determine the local optical…

Ca and S K-edge spectra of CaS are calculated by the full-potential Green's function multiple-scattering method, by the FLAPW method, and by the finite difference method. All three techniques lead to similar spectra. Some differences remain…

Single-photon emitters (SPEs) are crucial for quantum technologies such as quantum simulation, secure quantum communication, and precision measurements. Two-dimensional transition metal dichalcogenides (TMDCs) are promising SPE candidates…

Single crystalline CaFe2As2 and (Ca1-xNax)Fe2As2 polycrystals (0 < x < 0.66) are synthesized and characterized using structural, magnetic, electronic transport, and heat capacity measurements. These measurements show that the…

The high-frequency Raman-active phonon modes of metallic single-walled carbon nanotubes (SWNTs) are thought to be characterized by Kohn anomalies (KAs), which are expected to be modified by the doping-induced tuning of the Fermi energy…

Gallium arsenide (GaAs) doped with erbium (Er), a material of interest for optoelectronics and quantum information, has been studied for decades. Yet the formation of Er luminescence centers in the semiconductor host and their properties…

The large error of the DFT+U method on full-filled shell metal oxides is due to the residue of self-energy from the localized d orbitals of cations and p orbitals of the anions. U parameters are self-consistently found to achieve the…

Recent photoemission experiments on the quasi-one-dimensional Ba-based cuprates suggest that doped holes experience an attractive potential not captured using the simple Hubbard model. This observation has garnered significant attention due…

The semiconducting behaviour and optoelectronic response of gallium nitride is governed by point defect processes, which, despite many years of research, remain poorly understood. The key difficulty in the description of the dominant…