Related papers: Spin-transfer-torque efficiency enhanced by edge-d…
The Perpendicular Shape Anisotropy Spin Transfer Torque Magnetic Random Access Memory (PSA-STT-MRAM) is a recent concept proposed to maintain the thermal stability of standard MRAM at small diameters, considering thick vertical pillars as…
Spin-Transfer Torque Magnetic RAM} (STT-MRAM) is a promising alternative for SRAMs in on-chip cache memories. Besides all its advantages, high error rate in STT-MRAM is a major limiting factor for on-chip cache memories. In this paper, we…
A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…
Prior studies have shown that the retention time of the non-volatile spin-transfer torque RAM (STT-RAM) can be relaxed in order to reduce STT-RAM's write energy and latency. However, since different applications may require different…
We study in-plane magnetic tunnel junctions with additional perpendicular polarizer for subnanosecond-current-induced switching memories. The spin-transfer-torque switching dynamics was studied as a function of the cell aspect ratio both…
We investigate the dependence of perpendicular and parallel spin transfer torque (STT) and tunneling magnetoresistance (TMR) on the insulator barrier energy in the magnetic tunnel junction (MTJ). We employed single orbit tight binding model…
The role of universal memory can be successfully satisfied by magnetic tunnel junctions (MTJs) where the writing mechanism is based on spin-transfer torque (STT). An improvement in the switching properties (lower switching current density…
We investigate an interfacial spin-transfer torque and $\beta$-term torque with alternating current (AC) parallel to a magnetic interface. We find that both torques are resonantly enhanced as the AC frequency approaches to the exchange…
We propose a method for inducing magnetization reversal using an AC spin current polarized perpendicular to the equilibrium magnetization of the free magnetic layer. We show that the critical AC spin current is significantly smaller than…
The high current density required by Magnetic Tunneling Junction (MTJ) switching driven by Spin Transfer Torque (STT) effect leads to large power consumption and severe reliability issues therefore hinder the timetable for STT Magnetic…
Recent work [1,2] suggests that ferromagnetic reversal with spin transfer torque (STT) requires more current in a system in the presence of DMI than switching a typical ferromagnet of the same dimensions and perpendicular magnetic…
The spin transfer torque (STT) can lead to steady precession of magnetization without any external applied field in magnetic spin valve where the magnetic layer have very different spin diffusion length. This effect is associated with an…
A non-volatile SRAM cell is proposed for low power applications using Spin Transfer Torque-Magnetic Tunnel Junction (STT-MTJ) devices. This novel cell offers non-volatile storage, thus allowing selected blocks of SRAM to be switched off…
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer…
Spin-orbit torque (SOT) is a candidate technique in next generation magnetic random-access memory (MRAM). Recently, experiments show that some material with low-symmetric crystalline or magnetic structures can generate anomalous SOT that…
The phenomenon of spin transfer torque (STT) has attracted a great deal of interests due to its promising prospects in practical spintronic devices. In this paper, we report a theoretical investigation of STT in a noncollinear magnetic…
Magnetic materials with strong perpendicular magnetic anisotropy are of great interest for the development of nonvolatile magnetic memory and computing technologies due to their high stabilities at the nanoscale. However, electrical…
We have investigated Surface Acoustic Wave (SAW) induced ferromagnetic resonance (FMR) assisted Spin Transfer Torque (STT) switching of perpendicular MTJ (p-MTJ) with inhomogeneities using micromagnetic simulations that include the effect…
Spin-transfer-torque random access memory (STT-RAM) is a promising candidate for the next-generation of random-access-memory due to improved scalability, read-write speeds and endurance. However, the write pulse duration must be long enough…
Spin transfer torques (STTs) control magnetisation by electric currents, enabling a range of nano-scale spintronic applications. They can destabilise the equilibrium magnetisation state by counteracting magnetic relaxation. Here, we…