Related papers: Solution-grown nanowire devices for sensitive and …
Few-layer black phosphorus, a new elemental 2D material recently isolated by mechanical exfoliation, is a high-mobility layered semiconductor with a direct bandgap that is predicted to strongly depend on the number of layers, from 0.35 eV…
In this paper, we report the synthesis of high-quality Ta2Ni3Se8 crystals free of noble or toxic elements and the fabrication and testing of photodetectors on the wire samples. A broadband photoresponse from 405 nm to 1550 nm is observed,…
We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic…
Photodetectors are typically based on photocurrent generation from electron-hole pairs in semiconductor structures and on bolometry for wavelengths that are below bandgap absorption. In both cases, resonant plasmonic and nanophotonic…
The realization of a semiconductor near-unity absorber in the infrared will provide new capabilities to transform applications in sensing, health, imaging, and quantum information science, especially where portability is required.…
Superconducting nanowire single photon detectors are rapidly emerging as a key infrared photon-counting technology. Two front-side-coupled silver dipole nanoantennas, simulated to have resonances at 1480 nm and 1525 nm, were fabricated in a…
Silicon photodetectors are highly desirable for their CMOS compatibility, low cost, and fast response speed. However, their application the infrared (IR) is limited by silicon's intrinsic bandgap, which restricts its detection to photons…
Fast and accurate detection of light in the near-infrared (NIR) spectral range plays a crucial role in modern society, from alleviating speed and capacity bottlenecks in optical communications to enhancing the control and safety of…
Quasi-2D metal halide perovskites have emerged as a promising material for photodetection due to excellent optoelectronic properties, simple synthesis, and robust stability. Albeit, developing high-performance photodetectors based on…
Recent development on Ge$_{1-x}$Sn$_x$ nanowires with high Sn content, beyond its solid solubility limit, make them attractive for all group-IV Si-integrated infrared photonics at nanoscale. Herein, we report a chemical vapour…
We designed, fabricated, and measured superconducting nanowire single-photon detectors (SSPDs) with low filling factor which achieve high system detection efficiency (SDE) and counting rate simultaneously. Numerical simulation reveals that…
Low cost, easily integrable photodetectors (PDs) for silicon (Si) photonics are still a bottleneck for photonic integrated circuits (PICs), especially for wavelengths above 1.8 ${\mu}$m. Multilayered platinum diselenide (PtSe$_2$) is a…
We present a superconducting cavity-coupled double quantum dot (DQD) photodiode that achieves a maximum photon-to-electron conversion efficiency of 25% in the microwave domain. With a higher-quality-factor cavity and improved device design…
A fast silicon-graphene hybrid plasmonic waveguide photodetectors beyond 1.55 {\mu}m is proposed and realized by introducing an ultra-thin wide silicon-on-insulator ridge core region with a narrow metal cap. With this novel design, the…
Achieving low contact resistance in advanced quantum electronic devices remains a critical challenge. With the growing demand for faster and energy-efficient devices, 2D contact engineering offers a promising solution. Beyond graphene,…
Silicon-based photonic biosensors, such as microring resonators and Mach-Zehnder interferometers, offer significant potential for the detection of analytes at low concentrations. To enhance response time and improve the limit of detection…
We report on high-efficiency superconducting nanowire single-photon detectors based on amorphous WSi and optimized at 1064 nm. At an operating temperature of 1.8 K, we demonstrated a 93% system detection efficiency at this wavelength with a…
We demonstrate a superconducting photon-number-resolving detector capable of resolving up to twelve photons at telecommunication wavelengths. It is based on a series array of twelve superconducting NbN nanowire elements, each connected in…
Organo-lead halide perovskite materials have opened up a great opportunity to develop high performance photodetectors because of their superior optoelectronic properties. The main issue with perovskite-only photodetector is severe carrier…
In order to increase the response speed of the InSe-based photodetector with high photoresponsivity, graphene is used as the transparent electrodes to modify the difference of the work function between the electrodes and the InSe. As…