Related papers: Ambipolar spin-spin coupling in p$^+$-GaAs
We introduce a distinctive feature of spin-polarized transport, the Spin Coulomb Drag: there is an intrinsic source of friction for spin currents due to the Coulomb interaction between spin ``up'' and spin ``down'' electrons. We calculate…
Spin dependent recombination in GaAsN offers many interesting possibilities in the design of spintronic devices mostly due to its astounding capability to reach conduction band electron spin polarizations close to 100% at room temperature.…
We study the effect of the electron-electron interaction on the transport of spin polarized currents in metals and doped semiconductors in the diffusive regime. In addition to well-known screening effects, we identify two additional…
Spin-charge coupling is studied for a strongly confined two-dimensional hole gas subject to a perpendicular magnetic field. The study is based on spin-charge coupled drift-diffusion equations derived from quantum-kinetic equations in an…
In superconductors spin-split by an exchange field, thermal effects are coupled to spin transport. We show how an oscillating electromagnetic field in such systems creates spin imbalance, that can be detected with a spin-polarized probe.…
Using a microfabricated, p-type GaAs Hall bar, is it shown that the combined application of co-planar electric and magnetic fields enables the observation at 50 K of spatial oscillations of the photoluminescence circular polarization due to…
An electron propagating through a solid carries spin angular momentum in addition to its mass and charge. Of late there has been considerable interest in developing electronic devices based on the transport of spin, which offer potential…
Due to the spin-orbital coupling in a semiconductor quantum dot, a freely precessing electron spin produces a time-dependent charge density. This creates a sizeable electric field outside the dot, leading to promising applications in…
A theory of spin-polarized transport in inhomogeneous magnetic semiconductors is developed and applied to magnetic/nonmagnetic p-n junctions. Several phenomena with possible spintronic applications are predicted, including spinvoltaic…
The Coulomb interaction between electrons of opposite spin orientations in a metal or in a doped semiconductor results in a negative off-diagonal component of the electrical resistivity matrix -- the so-called "spin-drag resistivity". It is…
The phenomenon of low-temperature spin Coulomb drag in a two-dimensional electron gas is investigated. The spin transresistivity coefficient is essentially enhanced in the diffusive regime, as compared to conventional predictions. The…
A ring structure fabricated from GaAs is used to achieve interference of the net spin polarization of conduction band electrons. Optically polarized spins are split into two packets by passing through two arms of the ring in the diffusive…
We predict that the flow of unpolarized current in electron-doped GaAs and InP at room temperature is unstable at high electric fields to the dynamic formation of spin-polarized current pulses. Spin-polarized current is spontaneously…
We find that photoexcited electrons in an n-GaAs epilayer rapidly (< 50 ps) spin-polarize due to the proximity of an epitaxial ferromagnetic metal. Comparison between MnAs/GaAs and Fe/GaAs structures reveals that this coherent spin…
We utilize electron counting techniques to distinguish a spin conserving fast tunneling process and a slower process involving spin flips in AlGaAs/GaAs-based double quantum dots. By studying the dependence of the rates on the interdot…
Converse effect of spin photocurrent and current induced spin polarization are experimentally demonstrated in the same two-dimensional electron gas system with Rashba spin splitting. Their consistency with the strength of the Rashba…
Electrons in double-layer semiconductor heterostructures experience a special type of spin-orbit interaction which arises in each layer from the perpendicular component of the Coulomb electric field created by electron density fluctuations…
Inter-band photo-excitation of electron states with the twisted photons in GaAs, a direct band-gap bulk semiconductor, is considered theoretically. Assuming linearity of the quantum transition amplitudes and applying Wigner-Eckart theorem,…
The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility 2D electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and…
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…