Related papers: Compensation of radiation damages for SOI pixel de…
Using industrial standard 0.35{\mu}m CMOS Integrated Circuit process, we realized a highly pixelated sensor that directly collects charge via metal nodes placed on the top of each pixel and forms two dimensional images of charge cloud…
Technological tests of Total Ionizing Dose effects are required not only for silicon particle sensors developed in high energy physics experiments, but also for electronic devices and semiconductor elements used in commercial, automotive…
CMOS sensors were successfully implemented in the STAR tracker [1]. LHC experiments have shown that efficient b tagging, reconstruction of displaced vertices and identification of disappearing tracks are necessary. An improved vertex…
We present an investigation into the effects of high-energy proton damage on charge trapping in germanium cross-strip detectors, with the goal of accomplishing three important measurements. First, we calibrated and characterized the…
Modern intense ultrafast pulsed lasers generate an electric field of sufficient strength to permit tunnel ionization of the valence electrons in atoms. This process is usually treated as a rapid succession of isolated events, in which the…
Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ~6V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of…
The role of interface states and dielectric mismatch is studied in ultrathin P-doped silicon-on-insulator (SOI) films with thickness of the device layer ($H_{SOI}$) varying from 30 to 8 nm and dopant concentration ($n_{D}$) ranging from…
We demonstrate ion irradiation by argon or gallium as a wafer-scale post-processing method to increase disorder in superconducting thin films. We study several widely used superconductors, both single-elements and compounds. We show that…
Current-voltage measurements have been made at room temperature on a Si-rich silicon oxide film deposited via Electron-Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) and annealed at 750 - 1000$ ^\circ$C. The…
We have studied the effects of ionizing irradiation from a 60Co source and the effects of neutron irradiation on a Monolithic Active Pixel Sensor Chip(MIMOSA8). A previous report was devoted solely to the neutron-induced effects. We show…
The practical damage of silicon bipolar devices subjected to mixed ionization and displacement irradiations is usually evaluated by the sum of separated ionization and displacement damages. However, recent experiments show clear difference…
Current optical space telescopes rely upon silicon Charge Coupled Devices (CCDs) to detect and image the incoming photons. The performance of a CCD detector depends on its ability to transfer electrons through the silicon efficiently, so…
The focal plane of Athena's WFI consists of spectroscopic single photon X-ray detectors that contain arrays of DEPFETs (DEpleted P-channel Field-Effect Transistor) as well as ASICs that are used for steering, readout and analog signal…
In order to fully exploit the Physics potential of future e+ e- linear collider, a Vertex Detector providing high resolution track reconstruction is required. Hybrid Silicon pixel detectors are an attractive option for the sensor technology…
Silicon carbide is a promising material for radiation-hard detectors due to its wide bandgap, low leakage current, high critical electric field, and high saturation velocity. A key obstacle for its use in high-radiation environments is the…
Pixel detectors for precise particle tracking in high energy physics have been developed to a level of maturity during the past decade. Three of the LHC detectors will use vertex detectors close to the interaction point based on the hybrid…
CMOS Monolithic Active Pixel Sensors (CPS) are ultra-light and highly granular silicon pixel detectors suited for highly sensitive charged particle tracking. Being manufactured with cost efficient standard CMOS processes, CPS may integrate…
We have been developing event driven X-ray Silicon-On-Insulator (SOI) pixel sensors, called "XRPIX", for the next generation of X-ray astronomy satellites. XRPIX is a monolithic active pixel sensor, fabricated using the SOI CMOS technology,…
This study demonstrates the feasibility of a novel fabrication technique for high spatial resolution CsI: Tl scintillation detectors tailored for single photon emission computed tomography (SPECT) systems. Building upon our previously…
We propose SOI pixel circuits with a synchronized time memory cell (TMC) for time-of-flight stigmatic imaging mass spectrometry. The circuits simultaneously detect the position and the fine/coarse flight time of an ion for the MALDI-ToF…