Related papers: Building a doped Mott system by holography
We study the Mott transition in Hubbard models with a degenerate band on different 3-dimensional lattices. While for a non-degenerate band only the half-filled system may exhibit a Mott transition, with degeneracy there can be a transition…
The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide…
Mott insulators provide stable quantum states and long coherence times to due to small number fluctuations, making them good candidates for quantum memory and atomic circuits. We propose a proof-of-principle for a 1D Mott switch using an…
A detailed study of electronic phase transitions in the ionic Hubbard model at half filling is presented. Within the dynamical mean field approximation a series of transitions from the band insulator via a metallic state to a Mott-Hubbard…
In this work we study ultracold Fermions confined in a two-dimensional optical lattice and we explore the Mott-insulator transition with the Fermi-Hubbard model. On the basis of a mean-field approach, we study the phase diagrams in the…
The interaction-driven evolution from a Fermi liquid to a Mott insulator is a hallmark of strongly correlated fermion systems. In this work, we present a {\it numerically unbiased} study of such metal-to-insulator crossover in the…
We discuss the superfluid to Mott insulator transition of an atomic Bose gas in an optical lattice with high filling factors. We show that also in this multi-band situation, the long-wavelength physics is described by a single-band…
We study the binding of a holon to a doublon in a half-filled Hubbard model as the mechanism of the zero-temperature metal-insulator transition. In a spin polarized system and a non-bipartite lattice a single holon-doublon (HD) pair…
The coupling of electronic degrees of freedom in materials to create hybridized functionalities is a holy grail of modern condensed matter physics that may produce novel mechanisms of control. Correlated electron systems often exhibit…
We investigate the Hubbard model on the anisotropic triangular lattice as a suggested effective description of the Mott phase in various triangular organic compounds. Employing the variational cluster approximation and the ladder…
Various types of metal-insulator transitions are discussed to find conditions for which an ideal surface of a bulk insulator is metallic. It is argued that for the correlation-driven Mott metal-insulator transition the surface phase diagram…
A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…
We study the Bose-Hubbard model using the finite size density matrix renormalization group method. We obtain for the first time a complete phase diagram for a system in the presence of a harmonic trap and compare it with that of the…
We present the first-ever multi-scale dynamical simulation of the temperature-controlled Mott metal-insulator transition in the Hubbard model. By integrating advanced electronic structure method and an efficient Gutzwiller/slave-boson…
We investigate paramagnetic metal-insulator transitions in the infinite-dimensional ionic Hubbard model at finite temperatures. By means of the dynamical mean-field theory with an impurity solver of the continuous-time quantum Monte Carlo…
Quantum transitions between the Mott insulator and metals by controlling filling in two-dimensional square lattice are characterized by a large dynamical exponent $z=4$ where the origin of unusual metallic properties near the Mott insulator…
The correlation-driven metal-insulator (Mott) transition at a solid surface is studied within the Hubbard model for a semi-infinite lattice by means of the dynamical mean-field theory. The transition takes place at a unique critical…
Phase transitions in the Hubbard model and ionic Hubbard model at half-filling on the honeycomb lattice are investigated in the strong coupling perturbation theory which corresponds to an expansion in powers of the hopping $t$ around the…
We discuss the superfluid to Mott-insulator transition of cold atoms in optical lattices recently observed by Greiner et.al. (Nature 415, 39 (2002)). The fundamental properties of both phases and their experimental signatures are discussed…
Moir\'e superlattices formed in two-dimensional semiconductor heterobilayers provide a new realization of Hubbard model physics in which the number of electrons per effective atom can be tuned at will. We report on an exact diagonalization…