Related papers: Development of SOI pixel detector in Cracow

The SAMpler for PICosecond time (SAMPIC) chip has been designed by a collaboration including CEA/IRFU/SEDI, Saclay and CNRS/LAL/SERDI, Orsay. It benefits from both the quick response of a time to digital converter and the versatility of a…

We demonstrate superconducting single-photon detectors that integrate signals locally at each pixel. This capability is realized by the monolithic integration of superconducting-nanowire single-photon detectors with Josephson electronics.…

We present the first physical realization of in-pixel signal processing with integrated AI-based data filtering for particle tracking detectors. Building on prior work that demonstrated a physics-motivated edge-AI algorithm suitable for…

Ultra-sensitive short-wave infrared (SWIR) photon detection is a crucial aspect of ongoing research in quantum technology. However, developing such detectors on a CMOS-compatible silicon technological platform has been challenging due to…

Monolithic Active Pixel Sensors (MAPS) combine the sensing part and the front-end electronics in the same silicon layer, making use of CMOS technology. Profiting from the progresses of this commercial process, MAPS have been undergoing…

The high-luminosity operation of the Tracker in the Compact Muon Solenid (CMS) detector at the Large Hadron Collider (LHC) experiment calls for the development of silicon-based sensors. This involves implementation of AC-coupling to…

3D silicon detectors, in which the electrodes penetrate the sensor bulk perpendicular to the surface, have recently undergone a rapid development from R\&D over industrialisation to their first installation in a real high-energy-physics…

The pixel detector is the innermost tracking device in CMS, reconstructing interaction vertices and charged particle trajectories. The sensors located in the innermost layers of the pixel detector must be upgraded for the ten-fold increase…

We describe feedhorn-coupled polarization-sensitive detector arrays that utilize monocrystalline silicon as the dielectric substrate material. Monocrystalline silicon has a low-loss tangent and repeatable dielectric constant,…

Silicon p-n junction diodes emit low-intensity, broad-spectrum light near 1120 nm in forward bias and between 400-900 nm in reverse bias (avalanche). For the first time, we experimentally achieve optical absorption sensing of pigment in…

The optimisation of the sensitive region of CMOS sensors with complex non-uniform electric fields requires precise simulations, and this can be achieved by a combination of electrostatic field simulations and Monte Carlo methods. This paper…

Combining electrostatic field simulations with Monte Carlo methods enables realistic modeling of the detector response for novel monolithic silicon detectors with strongly non-linear electric fields. Both the precise field description and…

Silicon photodiode based CMOS sensors with backside-illumination for 300 to 1000 nm wavelength range were studied. We showed that a single hole in the photodiode increases the optical efficiency of the pixel. In near-infrared wavelengths,…

Both the current upgrades to accelerator-based HEP detectors (e.g. ATLAS, CMS) and also future projects (e.g. CEPC, FCC) feature large-area silicon-based tracking detectors. We are investigating the feasibility of using CMOS foundries to…

The depleted CMOS sensors are emerging as one of the main candidate technologies for future tracking detectors in high luminosity colliders. Its capability of integrating the sensing diode into the CMOS wafer hosting the front-end…

Recent advances in CMOS imaging sensor technology , e.g. in CMOS pixel sensors, have proven that the CMOS process is radiation tolerant enough to cope with certain radiation levels required for tracking layers in hadron collider…

A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5 micron^2 pixels have been developed for direct imaging in transmission electron microscopy as part of the TEAM project. We present the design and a full characterisation…

A pixel detector with high spatial resolution and temporal information for ultra-cold neutrons is developed based on a commercial CCD on which a neutron converter is attached. 10B and 6Li are tested for the neutron converter and 10B is…

For the Inner Tracking System 3 (ITS3) upgrade, the ALICE experiment at CERN requires monolithic active pixel sensors of dimensions up to 97~mm$\,\times\,$266~mm, occupying a large fraction of a 300 mm wafer. To manufacture such a…

Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are…