Related papers: Separating read and write units in multiferroic de…
Composite multiferroics, heterostructures of ferromagnetic (FM) and ferroelectric (FE) materials, are characterized by a remarkable magnetoelectric effect at the interface. Previous work has supported the ferromagnetic structure with…
Magnetic tunnel junctions (MTJs), composed of two ferromagnetic electrodes separated by a thin insulating barrier layer, are currently used in spintronic devices, such as magnetic sensors and magnetic random access memories. Recently,…
A material that reveals two or more ferroelectric properties at the same time is called multiferroic materials. The most commonly multiferroic materials shows ferroelectricity and ferromagnetism property within a single phase. Accordingly…
A ferroelectric tunnel barrier in between two ferromagnetic electrodes (multiferroic tunnel junction, MFTJ), is one of the most promising concepts for future microelectronic devices. In parallel, Hafnia based ferroelectrics are showing…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
The need for increasingly powerful computing hardware has spawned many ideas stipulating, primarily, the replacement of traditional transistors with alternate "switches" that dissipate miniscule amounts of energy when they switch and…
Magnetic nano-objects possess great potential for more efficient data processing, storage and neuromorphic type of applications. Using high perpendicular magnetic anisotropy synthetic antiferromagnets in the form of multilayer-based…
Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel…
Mutiferroics are a novel class of next generation multifunctional materials, which display simultaneous magnetic spin, electric dipole, and ferroelastic ordering, and have drawn increasing interest due to their multi-functionality for a…
Composite multiferroics are materials exhibiting the interplay of ferroelectricity, magnetism, and strong electron correlations. Typical example --- magnetic nano grains embedded in a ferroelectric matrix. Coupling of ferroelectric and…
This paper describes a robust, modular, and physics- based circuit framework to model conventional and emerging Magnetic Tunnel Junction (MTJ) devices. Magnetization dynamics are described by the stochastic Landau-Lifshitz-Gilbert (sLLG)…
Multiferroic tunnel junctions (MFTJs) have already been proved to be promising candidates for application in spintronics devices. The coupling between tunnel magnetoresistance (TMR) and tunnel electroresistance (TER) in MFTJs can provide…
Electrical tuning of magnetism is crucial for developing fast, compact, ultra-low power electronic devices. Multiferroics offer significant potential due to their ability to control magnetic via an electric field through magnetoelectric…
The development of new computing technologies has given a new stimulus in the study of multiferroics. The use of multiferroics allows the realization of competitive energy efficient scalable logic and storage devices. The low-power…
Magnetoelastic and magnetoelectric coupling in the artificial multiferroic heterostructures facilitate valuable features for device applications such as magnetic field sensors and electric write magnetic-read memory devices. In a…
We have fabricated nanoscale magnetic tunnel junctions (MTJs) with an additional fixed magnetic layer added above the magnetic free layer of a standard MTJ structure. This acts as a second source of spin-polarized electrons that, depending…
Graphical probabilistic circuit models of stochastic computing are more powerful than the predominant deep learning models, but also have more demanding requirements. For example, they require "programmable stochasticity", e.g. generating…
The electrically readable complex dynamics of robust and scalable magnetic tunnel junctions (MTJs) offer promising opportunities for advancing neuromorphic computing. In this work, we present an MTJ design with a free layer and two…
Switching the magnetization of a shape-anisotropic 2-phase multiferroic nanomagnet with voltage-generated stress is known to dissipate very little energy ($<$ 1 aJ for a switching time of $\sim$0.5 ns) at 0 K temperature. Here, we show by…
The ground state properties of correlated electron systems can be extraordinarily sensitive to external stimuli, such as temperature, strain, and electromagnetic fields, offering abundant platforms for functional materials. We present a…