Related papers: Inverse spin Hall effect in a complex ferromagneti…
In the last few years, some ideas of electric manipulations in ferromagnetic heterostructures have been proposed for developing next generation spintronic devices. Among them, the magnetization switching driven by spin-orbit torque (SOT) is…
The polarization of the spin current pumped by a precessing ferromagnet into an adjacent normal metal has a constant component parallel to the precession axis and a rotating one normal to the magnetization. The former component is now…
The interplay of spin-orbit coupling (SOC) and magnetism gives rise to a plethora of charge-to-spin conversion phenomena that harbor great potential for spintronics applications. In addition to the spin Hall effect, magnets may exhibit a…
Spin transfer torques allow for electrical manipulation of magnetization at room temperature, which is utilized to build future electronic devices such as spin transfer torque memories. Recent experiments have discovered that the…
Organic spintronics has drawn the interest of the science community due to various applications in spin-valve devices. But to date, an efficient room-temperature Organic Spin Valve device has not been experimentally realized due to the…
The spin Hall effect is a phenomenon that an electric field induces a spin Hall current. In this Letter, we examine the inverse effect that, in a ferromagnetic conductor, a charge Hall current is induced by a spin motive force, or a…
The spin pumping efficiency of lateral standing spin wave modes in a rectangular YIG/Pt sample has been investigated by means of the inverse spin-Hall effect (ISHE). The standing spin waves drive spin pumping, the generation of spin…
While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the low spin-orbit coupling (low atomic number, Z) and lack of…
Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one…
After establishing the fundamental understanding and the high throughput topological characterization of nearly all inorganic three-dimensional materials, the general interest and the demand of functional applications drive the research of…
The Rashba-Edelstein effect (REE), which generates interfacial spin polarization and subsequent spin current, is a compelling spin-charge conversion mechanism for spintronics applications, since it is not limited by the elemental spin-orbit…
The spin Hall effect and its inverse play key roles in spintronic devices since they allow conversion of charge currents to and from spin currents. The conversion efficiency strongly depends on material details, such as the electronic band…
Controlling charge-spin current conversion by electric fields is crucial in spintronic devices, which can be realized in diatom ferroelectric semiconductor GeTe where it is established that ferroelectricity can change the spin texture. We…
Ferromagnetic pyrochlore and spinel materials with topological flat bands are of interest for their potential to exhibit a giant anomalous Hall effect (AHE). In this work, we present computational predictions of stability and electronic…
The spin anomalous Hall effect (SAHE) in ferromagnetic metals, which can generate spin-orbit torque to rotate the magnetization of another ferromagnetic layer through a non-magnetic spacer in magnetic junctions, has attracted much…
The phenomenon of Spin Hall Effect (SHE) generates a pure spin current transverse to an applied current in materials with strong spin-orbit coupling, although not detectable through conventional electrical measurement. An intuitive Hall…
Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for…
We investigate the spin Hall magnetoresistance (SMR) at room temperature in thin film heterostructures of antiferromagnetic, insulating, (0001)-oriented alpha-Fe2O3 (hematite) and Pt. We measure their longitudinal and transverse…
A recent paper [Go $\textit{et al}$., Phys. Rev. Lett. $\textbf{121}$, 086602 (2018)] proposed that the intrinsic orbital Hall effect (OHE) can emerge from momentum-space orbital texture in centrosymmetric materials. In searching for real…
Epitaxial strain in transition-metal oxides can induce dramatic changes in electronic and magnetic properties. A recent study on the epitaxially strained SrCoO$_3$ thin films revealed persistent ferromagnetism even across a metal-insulator…