Related papers: Resonant tunneling through protected quantum dots …
Using a multi-orbital tight-binding model, we have studied the edge states of zigzag silicene, germanene, and stanene nanoribbons (ZSiNRs, ZGeNRs and ZSnNRs, respectively) in the presence of the Coulomb interaction and a vertical electric…
We investigate quantum communication between the sites of a spin-ring with twisted boundary conditions. Such boundary conditions can be achieved by a flux through the ring. We find that a non-zero twist can improve communication through…
Based on first-principles calculations, electronic properties of edge-functionalized zigzag graphene nanoribbons (ZGNRs) on SiO2 substrate are presented. Metallic or semiconducting properties of ZGNRs are revealed due to various…
Nowadays nanotechnology allows to scale-down various important devices (sensors, chips, fibres, etc), and, thus, opens up new horizon for their applications. Nevertheless, the efficiency most of them is still based on the fundamental…
Stacking two-dimensional layered materials such as graphene and transitional metal dichalcogenides with nonzero interlayer twist angles has recently become attractive because of the emergence of novel physical properties. Stacking of…
The flat band of edge states which occur in the simple tight-binding lattice model of graphene with a zig-zag edge have long been conjectured to take up a ferromagnetic configuration. In this work we demonstrate that, for a large class of…
Coupling, synchronization, and non-linear dynamics of resonator modes are omnipresent in nature and highly relevant for a multitude of applications ranging from lasers to Josephson arrays and spin torque oscillators. Nanomechanical…
Tunneling spectroscopy measurements of single tunnel junctions formed between multiwalled carbon nanotubes (MWNTs) and a normal metal are reported. Intrinsic Coulomb interactions in the MWNTs give rise to a strong zero-bias suppression of a…
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as…
We use spin torque ferromagnetic resonance to measure the spectral properties of dipole-exchange spin waves in permalloy nanowires. Our measurements reveal that geometric confinement has a profound effect on the damping of spin waves in the…
Spin-ordered electronic states in hydrogen-terminated zigzag nanographene give rise to magnetic quantum phenomena that have sparked renewed interest in carbon-based spintronics. Zigzag graphene nanoribbons (ZGNRs), quasi one-dimensional…
Zigzag nanoribbons of monolayer graphene-like two-dimensional materials host spontaneous edge magnetism at the zigzag terminations, whose configuration controls the band gap. In this article, the edge magnetism of zigzag nanoribbons of…
The tangential G-band in the Raman spectra of a metallic single-wall carbon nanotube shows two peaks: a higher frequency component having the Lorentzian shape and a lower-frequency component of lower intensity with a Breit-Wigner-Fano…
Vibrational properties of graphene nanoribbons are examined with density functional based tight-binding method and non-resonant bond polarization theory. We show that the recently discovered reconstructed zigzag edge can be identified from…
We examine structural and dynamical properties of quantum resonances associated with an avoided crossing and identify the parameter shifts where these properties attain maximal or extreme values, first at a general level, and then for a…
Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to…
The fundamental dynamics of ultracold atomtronic devices are reflected in their phonon modes of excitation. We probe such a spectrum by applying a harmonically driven potential barrier to a $^{23}$Na Bose-Einstein condensate in a…
We study resonant tunnelling through double-barrier structures under an applied bias voltage, in which nonlinearities due to self-interaction of electrons in the barrier regions are included. As an approximation, we concern ourselves with…
Using first-principles calculations, we have investigated the evolution of band-edges in few-layer phosphorene as a function of the number of P layers. Our results predict that monolayer phosphorene is an indirect band gap semiconductor and…
In this work, device performances of tunneling field effect transistors (TFETs) based on phosphorene are explored via self-consistent atomistic quantum transport simulations. Phosphorene is an ultra-thin two-dimensional (2-D) material with…