Related papers: Valley polarization assisted spin polarization in …
Memory or transistor devices based on electron's spin rather than its charge degree of freedom offer certain distinct advantages and comprise a cornerstone of spintronics. Recent years have witnessed the emergence of a new field,…
Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field…
In solid, the crystalline structure can endow electron an internal degree of freedom known as valley, which characterizes the degenerate energy minima in momentum space. The recent success in optical pumping of valley polarization in 2D…
The electron's charge and spin degrees of freedom are at the core of modern electronic devices. With the in-depth investigation of two-dimensional materials, another degree of freedom, valley, has also attracted tremendous research…
We demonstrate that, in a quasi-two-dimensional electron system confined to an AlAs quantum well and occupying two conduction-band minima (valleys), a parallel magnetic field can couple to the electrons' orbital motion and tune the energies…
Valley, as a new degree of freedom for electrons, has drawn considerable attention due to its significant potential for encoding and storing information. Lifting the energy degeneracy to achieve valley polarization is necessary for…
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological importance as it offers additional opportunities for information storage and electronic, magnetic and optical switches. In analogy to…
Monolayer transition metal dichalcogenides have emerged as prominent candidates to explore the complex interplay between the spin and the valleys degrees of freedom. The strong spin-orbit interaction and broken inversion symmetry within…
Valleytronics targets the exploitation of the additional degrees of freedom in materials where the energy of the carriers may assume several equal minimum values (valleys) at non-equivalent points of the reciprocal space. In single layers…
Valleytronics is one of the breaking-through to the technology of electronics, which provides a new degree of freedom to manipulate the properties of electrons. Combining DFT calculations, optical absorption analysis and the linear…
Valleytronics has been widely investigated for providing new degrees of freedom to future information coding and processing. Here, it is proposed that valley polarization can be achieved by electric field induced magnetic anisotropy (MA)…
We have studied the strongly interacting, two-valley two-dimensional (2D) electron system in ultrahigh mobility SiGe/Si/SiGe quantum wells in parallel magnetic fields strong enough to completely polarize the electron spins thus making the…
The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO$_2$/(100)Si/SiO$_2$ quantum well is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a…
The combination of altermagnetism, twistronics and valleytronics is of great significance for potential applications in advanced electronic devices. Twisted magnetic van der Waals bilayers have been identified as an ideal platform for…
Using several independent methods, we find that the metal-insulator transition occurs in the strongly-interacting two-valley two-dimensional electron system in ultra-high mobility SiGe/Si/SiGe quantum wells in zero magnetic field. The…
The magnetic field of complete spin polarization is calculated in a disorderless single-valley strongly-interacting 2D electron system. In the metallic region above the Wigner-Mott transition, non-equilibrium spin states are predicted,…
Measurements on a two-dimensional electron system confined to an AlAs quantum well reveal that for a given electron density the valley susceptibility, defined as the change in valley population difference per unit strain, is enhanced as the…
The valley-contrasting geometric features of electronic wave functions manifested in Berry curvature and orbital magnetic moment have profound consequences on magnetotransport properties in both three- and two-dimensional systems. Although…
Strong spin-orbit coupling and inversion symmetry breaking in transition metal dichalcogenide monolayers yield the intriguing effects of valley-dependent optical selection rules. As such, it is possible to substantially polarize valley…
Valleytronic materials, characterized by local extrema (valley) in their bands, and topological insulators have separately attracted great interest recently. However, the interplay between valleytronic and topological properties in one…