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Current-driven magnetization reversal in a ferromagnetic semiconductor based (Ga,Mn)As/GaAs/(Ga,Mn)As magnetic tunnel junction is demonstrated at 30 K. Magnetoresistance measurements combined with current pulse application on a rectangular…

Materials Science · Physics 2009-11-10 D. Chiba , Y. Sato , T. Kita , F. Matsukura , H. Ohno

Magnonics is a rapidly developing subfield of spintronics, which deals with devices and circuits that utilize spin currents carried by magnons - quanta of spin waves. Magnon current, i.e. spin waves, can be used for information processing,…

Mesoscale and Nanoscale Physics · Physics 2019-03-18 S. Rumyantsev , M. Balinskiy , F. Kargar , A. Khitun , A. A. Balandin

Fluctuations of the current through a tunnel junction are measured using a Josephson junction. The current noise adds to the bias current of the Josephson junction and affects its switching out of the supercurrent branch. The experiment is…

Mesoscale and Nanoscale Physics · Physics 2009-02-17 Q. Le Masne , H. Pothier , Norman O. Birge , C. Urbina , D. Esteve

Thermal-magnetic noise at ferromagnetic resonance (T-FMR) can be used to measure magnetic perpendicular anisotropy of nanoscale magnetic tunnel junctions (MTJs). For this purpose, T-FMR measurements were conducted with an external magnetic…

Mesoscale and Nanoscale Physics · Physics 2015-05-13 Yongfeng Guan , Jonathan Z. Sun , Xin Jiang , Rai Moriya , Li Gao , Stuart S. P. Parkin

We study spin and charge currents pumped by precessing magnetization of a single ferromagnetic layer within F|I|N or F|I|F (F-ferromagnet; I-insulator; N-normal-metal) multilayers of nanoscale thickness attached to two normal metal…

Mesoscale and Nanoscale Physics · Physics 2009-04-16 Son-Hsien Chen , Ching-Ray Chang , John Q. Xiao , Branislav K. Nikolic

This paper introduces and compares the various techniques for identification and analysis of low frequency oscillations in a power system. Inter-area electromechanical oscillations are the focus of this paper. After multiresolution…

Computational Engineering, Finance, and Science · Computer Science 2024-03-28 Maja Muftic Dedovic , Samir Avdakovic , Adnan Mujezinovic , Nedis Dautbasic

We study the classical dynamics of resonantly modulated large-spin systems in a strong magnetic field. We show that these systems have special symmetry. It leads to characteristic nonlinear effects. They include abrupt switching between…

Mesoscale and Nanoscale Physics · Physics 2008-02-19 C. Hicke , M. I. Dykman

We use micromagnetic simulation to demonstrate layer-selective detection of magnetization directions from magnetic dots having two recording layers by using a spin-torque oscillator (STO) as a read device. This method is based on…

Applied Physics · Physics 2019-10-02 Taro Kanao , Hirofumi Suto , Koichi Mizushima , Rie Sato

We consider electron transport in ferromagnets or antiferromagnets sandwiched between metals. When spins in the magnetic materials precess, they emit currents into the surrounding conductors. Generally, adiabatic pumping in mesoscopic…

Mesoscale and Nanoscale Physics · Physics 2020-08-17 Arne Brataas

The properties of spin fluctuations in antiferromagnets are largely unexplored, in particular at ultrafast timescales. Here, we employ femtosecond noise correlation spectroscopy (FemNoC) to experimentally study magnetization fluctuations in…

We experimentally study the auto-oscillating spin-wave modes in NiFe/$\beta-$W constriction-based spin Hall nano-oscillators as a function of bias current, in-plane applied field strength, and azimuthal field angle, in the low-field range…

Randomization of the trap state of defects present at the gate Si-SiO$_2$ interface of MOSFET is responsible for the low-frequency noise phenomena such as Random Telegraph Signal (RTS), burst, and 1/\textit{f} noise. In a previous work,…

Other Condensed Matter · Physics 2017-04-05 Kapil Jainwal , Mukul Sarkar , Kushal Shah

We examine current fluctuations in tunnel junctions driven by a superposition of a constant and a sinusoidal voltage source. In standard setups the external voltage is applied to the tunneling element via an impedance providing an…

Mesoscale and Nanoscale Physics · Physics 2016-08-03 Moritz Frey , Hermann Grabert

In this paper we analyze different contributions to the magnetoresistance of magnetic tunneling junctions at low voltages. A substantial fraction of the resistance drop with voltage can be ascribed to variations of the density of states and…

Mesoscale and Nanoscale Physics · Physics 2009-11-10 C. A. Dartora , G. G. Cabrera

We present a simple microscopic model to show how fluctuating two--level systems in the Josephson junction tunnel barrier of thickness $L$ can modify the potential energy of the barrier and produce critical current noise spectra. We find…

Superconductivity · Physics 2007-11-13 Magdalena Constantin , Clare C. Yu

Magnetic tunnel junctions (MTJs) are key enablers of spintronic technologies used in a variety of applications including information storage, microwave generation and detection, as well as unconventional computing. Here, we present…

Mesoscale and Nanoscale Physics · Physics 2025-03-12 Andrea Meo , Chengcen Sha , Emily Darwin , Riccardo Tomasello , Mario Carpentieri , Ilya N. Krivorotov , Giovanni Finocchio

Understanding the high-frequency transport characteristics of magnetic tunnel junctions (MTJs) is crucial for the development of fast-operating spintronics memories and radio frequency devices. Here, we present the study of…

Self-sustained current oscillations in weakly-coupled superlattices are studied by means of a self-consistent microscopic model of sequential tunneling including boundary conditions naturally. Well-to-well hopping and recycling of charge…

Condensed Matter · Physics 2009-10-31 David Sanchez , Miguel Moscoso , Luis L. Bonilla , Gloria Platero , Ramon Aguado

We compute the zero frequency current noise numerically and in several limits analytically for the coulomb blockade problem consisting of two tunnel junctions connected in series. At low temperatures over a wide range of voltages,…

New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is…

Materials Science · Physics 2009-11-10 A. M. Bratkovsky , V. V. Osipov
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