Related papers: III-V/Si Wafer Bonding Using Transparent, Conducti…
We present a detailed temperature and frequency dependence of the optical conductivity measured on clean high quality single crystals of URu$_{2}$Si$_{2}$ of $ac$- and $ab$-plane surfaces. Our data demonstrate the itinerant character of the…
We have successfully demonstrated Si/GaAs p-n heterostructures using Al2O3 ultra-thin oxide interfacial layers. The band diagram and band offsets were investigated using X-ray photoelectron spectroscopy and confirm a small discontinuity in…
Future wearable electronics, displays and photovoltaic devices rely on highly conductive, transparent and yet mechanically flexible materials. Nowadays indium tin oxide (ITO) is the most wide spread transparent conductor in optoelectronic…
Light-matter interactions have generated considerable interest as a means to manipulate material properties. Light-induced superconductivity has been demonstrated using pulsed lasers. An attractive alternative possibility is to exploit…
Extensible quantum computing architectures require a large array of quantum devices operating with low error rates. A quantum processor based on superconducting quantum bits can be scaled up by stacking microchips that each perform…
In recent years, various materials have been developed to reduce the reliance of industries on Indium, a primary component of transparent conducting oxides (TCOs) used in the current generation of devices. The leading candidates for indium…
A theoretical study of the newly identified Ti5Al2C3 belonging to the MAX phases has been performed by using the first-principles pseudopotential plane-wave method within the generalized gradient approximation (GGA). The energy band…
We demonstrate a novel type of solar cell, one that uses fixed negative charges, formed at the interface of n-Si with Al2O3, to generate strong inversion at the Si surface by electrostatic repulsion. Built-in voltages of up to 755 mV are…
In their article, Zhang et al. [Phys. Rev. B 86, 024516 (2012)] present a remarkable result for A$_x$(S)$_y$TiNCl compounds ($\alpha$-phase TiNCl partially intercalated with alkali A and optionally co-intercalated molecular species S),…
A tunable conductivity has been achieved by controllable substitution of a novel UV light activated electronic conductor. The transparent conducting oxide system H-doped Ca12-xMgxAl14O33 (x = 0; 0.1; 0.3; 0.5; 0.8; 1.0) presents a…
Transparent conductive oxides such as indium tin oxide (ITO) bear the potential to deliver efficient all-optical functionality due to their record-breaking optical nonlinearity at epsilon near zero (ENZ) wavelengths. All-optical…
We observe remarkably strong room temperature ferromagnetism (~1.5 Bohr Magneton/Mn) in optically transparent Mn(II)-doped indium tin oxide (ITO) films. The nanocrystalline films with average grain size 10-22 nm and thickness 150-350 nm are…
The eventual exploitation of one-dimensional nanomaterials yet needs the development of scalable, high yield, homogeneous, and environmentally friendly methods able to meet the requirements for the fabrication of under design functional…
The development of compact, energy-efficient integrated lasers operating at 1.3 um remains a critical focus in silicon photonics, essential for advancing data communications and optical interconnect technologies. This paper presents a…
Superconductivity in V-based kagome metals has recently raised great interest as they exhibit the competing ground states associated with the flat bands and topological electronic structures. Here we report the discovery of…
We have developed a classical two- and three-body interaction potential to simulate the hydroxylated, natively oxidised Si surface in contact with water solutions, based on the combination and extension of the Stillinger-Weber potential and…
Tungsten oxide and its associated bronzes (compounds of tungsten oxide and an alkali metal) are well known for their interesting optical and electrical characteristics. We have modified the transport properties of thin WO$_3$ films by…
Sn-doped In$_2$O$_3$ or ITO is the most widely used transparent conducting oxide. We use first-principles calculations to investigate the limitations to its transparency due to free-carrier absorption mediated by phonons or charged defects.…
In this work is comprising of simulation results of amorphous Si (a-Si) solar cell, in which ITO was used as an anti-reflection coating (ARC). The thickness of ITO was optimized (65 nm) to achieve better performance for spectral region of…
Absorption of light in superconducting electronics is a major limitation on the quality of circuit architectures that integrate optical components with superconducting components. A 10 nm thick film of a typical superconducting material…