Related papers: Codes for Partially Stuck-at Memory Cells
We present code constructions for masking $u$ partially stuck memory cells with $q$ levels and correcting additional random errors. The results are achieved by combining the methods for masking and error correction for stuck cells in [1]…
This paper considers coding for so-called partially stuck (defect) memory cells. Such memory cells can only store partial information as some of their levels cannot be used fully due to, e.g., wearout. First, we present new constructions…
This paper considers coding for so-called partially stuck memory cells. Such memory cells can only store partial information as some of their levels cannot be used due to, e.g., wear out. First, we present a new code construction for…
This work deals with error correction for non-volatile memories that are partially defective at some levels. Such memory cells can only store incomplete information since some of their levels cannot be utilized entirely due to, e.g.,…
In this paper, we propose an encoding scheme for partitioned linear block codes (PLBC) which mask the stuck-at defects in memories. In addition, we derive an upper bound and the estimate of the probability that masking fails. Numerical…
Flash memory is a non-volatile computer memory comprising blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by erasing…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by…
Flash memory devices are winning the competition for storage density against magnetic recording devices. This outcome results from advances in physics that allow storage of more than one bit per cell, coupled with advances in signal…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell can take on q different levels corresponding to the number of electrons it contains. Increasing the cell level is easy; however, reducing a cell…
Block codes are considered for improving the reliability of messages stored in a computer memory with both stuck-at defects and random errors. It is assumed that the side information about the state of the defects is available to the…
In this work we consider a generalization of the well-studied problem of coding for ``stuck-at'' errors, which we refer to as ``strong stuck-at'' codes. In the traditional framework of stuck-at codes, the task involves encoding a message…
\emph{Resistive memories}, such as \emph{phase change memories} and \emph{resistive random access memories} have attracted significant attention in recent years due to their better scalability, speed, rewritability, and yet non-volatility.…
DNA storage systems face significant challenges, including insertion, deletion, and substitution (IDS) errors. Therefore, designing effective synchronization codes, i.e., codes capable of correcting IDS errors, is essential for DNA storage…
We study the largest possible length $B$ of $(B-1)$-dimensional linear codes over $\mathbb{F}_q$ which can correct up to $t$ errors taken from a restricted set $\mathcal{A}\subseteq \mathbb{F}_q^*$. Such codes can be applied to multilevel…
In this paper, we consider modulation codes for practical multilevel flash memory storage systems with cell levels. Instead of maximizing the lifetime of the device [Ajiang-isit07-01, Ajiang-isit07-02, Yaakobi_verdy_siegel_wolf_allerton08,…
Rank modulation has been recently proposed as a scheme for storing information in flash memories. While rank modulation has advantages in improving write speed and endurance, the current encoding approach is based on the "push to the top"…
We investigate layer codes, a family of three-dimensional stabilizer codes that can achieve optimal scaling of code parameters and a polynomial energy barrier, as candidates for self-correcting quantum memories. First, we introduce two…
Phase-change memory (PCM) is a promising non-volatile solid-state memory technology. A PCM cell stores data by using its amorphous and crystalline states. The cell changes between these two states using high temperature. However, since the…
We study error-correcting codes for permutations under the infinity norm, motivated by a novel storage scheme for flash memories call rank modulation. In this scheme, a set of $n$ flash cells are combined to create a single virtual…
We present a constraint-coding scheme to correct asymmetric magnitude-$1$ errors in multi-level non-volatile memories. For large numbers of such errors, the scheme is shown to deliver better correction capability compared to known…