Related papers: Surface and Step Conductivities on Si(111) Surface…
Scanning tunneling microscope (STM) is a powerful tool for studying the structural and electronic properties of materials at the atomic scale. The combination of low temperature and high magnetic field for STM and related spectroscopy…
The energetics of H$_2$ interacting with the Si(100) surface is studied by means of {\em ab initio} total energy calculations within the framework of density functional theory. We find a direct desorption pathway from the mono-hydride phase…
The two-dimensional (2D) surface state of the three-dimensional strong topological insulator (STI) is fundamentally distinct from other 2D electron systems in that the Fermi arc encircles an odd number of Dirac points. The TI surface is in…
Recently, a single atom transistor was deterministically fabricated using phosphorus in Si by H-desorption lithography with a scanning tunneling microscope (STM). This milestone in precision, achieved by operating the STM in the…
A promising direction for harnessing the laws of quantum mechanics to perform quantum computation is the topological quantum computation, for which topological superconductivity is one of the physical platforms. Intensive theoretical…
Signed distance fields (SDFs) are a widely used implicit surface representation, with broad applications in computer graphics, computer vision, and applied mathematics. To reconstruct an explicit triangle mesh surface corresponding to an…
Analytical contact mechanics theories depend on surface roughness through the surface roughness power spectrum. In the present study, we evaluated the usability of various experimental methods for studying surface roughness. Our findings…
We investigate quasi one-dimensional atomic chains on Si(553)-Au with a scanning tunneling microscope (STM). The observed periodicity at the Si step edge can be altered by the STM and depends on the magnitude of the tunneling current. In a…
The two stable surfaces of GdRu2Si2 are studied using spin-polarized scanning tunneling microscopy (SP-STM). Depending on the applied magnetic field different magnetic phases have been found and the presented measurements are in agreement…
An intrinsic curvature model is investigated using the canonical Monte Carlo simulations on dynamically triangulated spherical surfaces of size upto N=4842 with two fixed-vertices separated by the distance 2L. We found a first-order…
This paper studies thermal transport in nanoporous silicon with a significant specific surface area. First, the equilibrium molecular dynamics approach was used to obtain the dependence of thermal conductivity on a specific surface area.…
High-index surfaces of silicon with adsorbed gold can reconstruct to form highly ordered linear step arrays. These steps take the form of a narrow strip of graphitic silicon. In some cases - specifically, for Si(553)-Au and Si(557)-Au - a…
The Scanning Tunneling Microscope (STM) is a powerful instrument to study electronic density of states at surfaces down to atomic scale. Many interesting samples require studying variations as a function of the magnetic field, which is most…
We study the vicinal surface of the restricted solid-on-solid model coupled with the Langmuir adsorbates which we regard as two-dimensional lattice gas without lateral interaction. The effect of the vapor pressure of the adsorbates in the…
Atomic Force Microscopy (AFM) combined with electrical modes provides a powerful contactless approach to characterize material electrical properties at the nanoscale. However, conventional electrostatic models often overlook dynamic charge…
The structures and energetics of organic molecules adsorbed onto clean and H-passivated Si(001)-(2$\times$1) surfaces have been calculated using density functional theory. For benzene adsorbed on the clean Si surface the tight-bridge…
Electric field, uniform within the slab, emerging due to Fermi level pinning at its both sides is analyzed using DFT simulations of the SiC surface slabs of different thickness. It is shown that for thicker slab the field is nonuniform and…
This article presents a new optical measurement method employing a HSI (Hue, Saturation and Intensity) colour model to form trapezoidal structured patterns for morphology reconstruction of a measured object at a high speed. Profilometry on…
Due to the improvement of computer power and the development of efficient algorithms it is now possible to combine high-dimensional quantum dynamical calculations of the dissociative adsorption of molecular beams with reliable ab-initio…
The electrical conductance and RHEED intensities as a function of the coverage have been measured during Pb depositions at 105 K on Si(111)-(6x6)Au with up to 4.2 ML of annealed Pb. The experiments show the strong influence of used…