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Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the…

Materials Science · Physics 2016-02-23 Jonas Lähnemann , Uwe Jahn , Oliver Brandt , Timur Flissikowski , Pinar Dogan , Holger T. Grahn

Epitaxially-grown semiconductor heterostructures give the possibility to tailor the potential landscape for the carriers in a very controlled way. In planar lattice-matched heterostructures, the potential has indeed a very simple and easily…

Materials Science · Physics 2011-08-23 Yann-Michel Niquet , Christophe Delerue

The wurtzite (wz) structure of CdS is analyzed using density functional theory within the generalized gradient approximation (GGA) and Hubbard correction (GGA+U). The total energy convergence evaluation is carried out concerning energy…

Materials Science · Physics 2022-06-22 Ankan Biswas , S. R. Meher , Deepak K. Kaushik

In this paper a multi-band envelope-function Hamiltonian for lattice-matched semiconductor heterostructures is derived from first-principles norm-conserving pseudopotentials. The theory is applicable to isovalent or heterovalent…

Materials Science · Physics 2007-05-23 Bradley A. Foreman

The combined effect of finite potential barriers and dielectric mismatch between dot and matrix on excitonic properties of semiconductor quantum dots has been studied. To avoid the unphysical divergence in the self-polarization energy which…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Pablo G. Bolcatto , Cesar R. Proetto

We report a new biphasic crystalline wurtzite/zinc-blende homostructure in gallium nitride nanowires. Cathodoluminescence was used to quantitatively measure the wurtzite and zinc-blende band gaps. High resolution transmission electron…

We derive interatomic potentials for zinc blende InAs, InP, GaAs and GaP semiconductors with possible applications in the realm of nanostructures. The potentials include bond stretching interaction between the nearest and next-nearest…

Mesoscale and Nanoscale Physics · Physics 2011-07-04 Peng Han , Gabriel Bester

Ground state properties of SiC, AlN, GaN and InN in the zinc-blende and wurtzite structures are determined using an ab initio scheme. For the self-consistent field part of the calculations, the Hartree-Fock program Crystal has been used.…

Materials Science · Physics 2009-10-30 Beate Paulus , Fa-Jian Shi , Hermann Stoll

The superconducting proximity effect on two-dimensional massless Dirac electrons is usually analyzed using a simple model consisting of the Dirac Hamiltonian and an energy-independent pair potential. Although this conventional model is…

Mesoscale and Nanoscale Physics · Physics 2015-06-18 Yositake Takane , Ryo Ando

A procedure is presented that combines density functional theory computations of bulk semiconductor alloys with the semiconductor Bloch equations, in order to achieve an ab initio based prediction of the optical properties of semiconductor…

Materials Science · Physics 2017-06-08 L. C. Bannow , P. Rosenow , P. Springer , E. W. Fischer , J. Hader , J. V. Moloney , R. Tonner , S. W. Koch

The structural and electronic properties of the wurtzite phase of the InAs and GaAs compounds are, for the first time, studied within the framework of Density Functional Theory (DFT). We used the full-potential linearized augmented plane…

Materials Science · Physics 2007-05-23 Zeila Zanolli , Ulf von Barth

The strong-interaction functionals $W_\infty[n]$ and ${W'}_\infty[n]$ play an important role in the adiabatic-connection method of Density Functional Theory. The strictly-correlated electron approach can be used to exactly compute these…

Other Condensed Matter · Physics 2026-03-09 L. A. Constantin , F. Naeem , 3 E. Fabiano , F. Sarcinella , F. Della Sala

Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under certain growth conditions to favor the appearance of wurtzite crystal phase. Despite the reports in literature of ab initio band structures for these…

The electronic structure of AlN in wurtzite and zinc-blende phases is studied experimentally and theoretically. By using x-ray emission spectroscopy, the Al 3p, Al 3s and N 2p spectral densities are obtained. The corresponding local and…

Materials Science · Physics 2007-05-23 P. Jonnard , N. Capron , F. Semond , J. Massies , E. Martinez-Guerrero , H. Mariette

The Dirac delta function potential is considered within the real Hilbert space approach for complex wave functions, as well as quaternionic wave functions. As has been previously determined, the real Hilbert space approach enables the…

Quantum Physics · Physics 2026-02-03 Sergio Giardino

In recent years, nanostructures with hexagonal polytypes of gold have been synthesised, opening new possibilities in nanoscience and technology. As bulk gold crystallizes in the \textit{fcc} phase, surface effects can play an important role…

Many commonly used nearest neighbor tight binding models for cubic semiconductors often result in inaccurate band structures when transferred to hexagonal polytypes. The resulting bandgaps are systematically too small, and in some cases…

Materials Science · Physics 2022-04-11 Craig Pryor , Joseph Sink

Type-II semi-Dirac fermions in two dimensions have been proposed to describe topologically nontrivial low-energy excitations in titanium/vanadium oxide heterostructures. These quasiparticles appear at the merger of three Dirac cones,…

Strongly Correlated Electrons · Physics 2026-05-19 Mohamed M. Elsayed , Taras I. Lakoba , Valeri N. Kotov

We introduced some contact potentials that can be written as a linear combination of the Dirac delta and its first derivative, the $\delta$-$\delta'$ interaction. After a simple general presentation in one dimension, we briefly discuss a…

Strongly interacting Dirac semimetals are investigated using a holographic model especially geared to compute the single-particle correlation function for this case, including both interaction effects and nonzero temperature. We calculate…

Strongly Correlated Electrons · Physics 2014-07-11 V. P. J. Jacobs , S. J. G. Vandoren , H. T. C. Stoof