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A tunneling transistor without heterojunction as a theoretical design, or more precisely controlled electron current transmission by barrier potential, is under consideration. The electrons from the conduction band of the source tunnel…
Field-effect transistors (FETs) with single gates are adversely affected by short channel effects such as drain-induced barrier lowering (DIBL) and increases in the magnitude of sub-threshold swing as the channel length is reduced.…
The main mechanism of energy loss in capacitors with nanoscale dielectric films is leakage currents. Using the example of Al-Al2O3-Al, we show that there are two main contributions, namely the cold field emission effect and the hopping…
We use numerical simulations to analyze recent experimental measurements of short-channel carbon nanotube field-effect transistors with palladium contacts. We show that the gate strongly modulates the contact properties, an effect that is…
We propose a concept for a graphene tunnel field-effect transistor. The main idea is based on the use of two graphene electrodes with zigzag termination divided by a narrow gap under the influence of the common gate. Our analysis shows that…
Graphene is of interest in the development of next-generation electronics due to its high electron mobility, flexibility and stability. However, graphene transistors have poor on/off current ratios because of the absence of a bandgap. One…
Steep transistors are crucial in lowering power consumption of the integrated circuits. However, the difficulties in achieving steepness beyond the Boltzmann limit experimentally have hindered the fundamental challenges in application of…
The latest generation of transistors are nanoscale devices whose performance and reliability are limited by thermal noise in low-power applications. Therefore developing efficient methods to compute the voltage and current fluctuations in…
While we demonstrate a back-gated (BG) amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors with a nearly ideal subthreshold slope (SS) ~ 60 mV/dec. However, SS degrades when a top-gated (TG) configuration is implemented. The energy…
The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and…
We study the consequences of negative differential electron mobility in insulated gate field effect transistors (FETS) using the field model. We show that, in contrast to the case of the monotonic velocity saturation model, the field…
We study field-effect transistors realized from VO2 nanobeams with HfO2 as the gate dielectric. When heated up from low to high temperatures, VO2 undergoes an insulator-to-metal transition. We observe a change in conductance (~ 6 percent)…
A nanoscale device consisting of a metal nanowire, a dielectric, and a gate is proposed. A combination of quantum and thermal stochastic effects enable the device to have multiple functionalities, serving alternately as a transistor, a…
The sub-threshold swing is the fundamental critical parameter determining the operation of a transistor in low-power applications such as switches. It determines the fraction of dissipation due to the gate capacitance used for turning the…
Transient negative capacitance effects in epitaxial ferroelectric Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ capacitors are investigated with a focus on the dynamical switching behavior governed by domain nucleation and growth. Voltage pulses are…
In this paper, we have presented the impact of the gate leakage through thin gate dielectrics (SiO2 and high-\k{appa} gate dielectric) on the subthreshold characteristics of the tunnel field effect transistors (TFET) for a low operating…
The physics of low subthreshold devices is interpreted in terms of a gate dependent change in their mode averaged transmission function, in addition to a capacitive shift in their overall mode spectrum. Accordingly, we explore a variety of…
The metal-graphene contact resistance is one of the major limiting factors toward the technological exploitation of graphene in electronic devices and sensors. A high contact resistance can be detrimental to device performance and spoil the…
The device concept of ferroelectric-based negative capacitance (NC) transistors offers a promising route for achieving energy-efficient logic applications that can outperform the conventional semiconductor technology, while viable operation…
In this article, we first point out a missing active-device while providing its theoretical definition and impact on electronics. This type of active devices has an inverse functionality of transistors, and is suggested to be called…