Related papers: Possible atomic structures for the sub-bandgap abs…
Tandem solar cells can better harness the energy of the solar spectrum. Chalcopyrite solar cells have drawn attention, being the only highly efficient devices with bandgap around 1.0 eV, suitable for bottom cells. In the quest for better…
Ultra-wide bandgap (UWBG) materials hold immense potential for high-power RF electronics and deep ultraviolet photonics. Among these, AlGaN emerges as a promising candidate, offering a tunable bandgap from 3.4 eV (GaN) to 6.1 eV (AlN) and…
A silicon light source at communication wavelength is the bottleneck for developing monolithically integrated silicon photonics. Doping silicon with erbium ions was believed to be one of the most promising approaches but suffers from the…
Silicon has long been the foundational semiconductor material for a broad range of electronic devices, owing to its numerous advantages: wide natural availability, ease of synthesis in both crystalline and amorphous forms, and relatively…
We study the photo-desorption occurring in H$_2$O:CO:NH$_3$ ice mixtures irradiated with monochromatic (550 and 900 eV) and broad band (250--1250 eV) soft X-rays generated at the National Synchrotron Radiation Research Center (Hsinchu,…
The thermodynamic parameters of the superconducting state, that gets induced in the metallic molecular hydrogen under the influence of the pressure at 414 GPa ($T_{C}=84$ K), have been determined. The calculations have been conducted in the…
A specific structure of doped graphene with substituted silicon impurity is introduced and ab. initio density-functional approach is applied for energy band structure calculation of proposed structure. Using the band structure calculation…
Due to its low bandgap and high optical efficiency, tellurium is considered an important material candidate for mid-infrared applications. Taking advantage of its structural anisotropy, we fabricated tellurium nanowire devices and…
Density functional theory based First Principles calculations were used to study the effect of Silicon (Si) doping on the structural, electronic and optical properties of CsCaI3. From our calculations, we predict that CsCaI3 can form stable…
Metal hydrides (MH) are often preferred to absorb and desorb hydrogen at ambient temperature and pressure with a high volumetric density. These hydrogen storage alloys create promising prospects for hydrogen storage and can solve the…
In solar cells, the absorbers are the key components for capturing solar energy and converting photons into electron-hole pairs. The search for high-performance absorbers with advantageous characteristics is an ongoing task for researchers.…
Understanding the detailed behaviour of superconducting pair breaking photon detectors such as Kinetic Inductance Detectors requires knowledge of the nonequilibrium quasiparticle energy distributions. We have previously calculated the…
Microstructured Silicon, which is obtained by irradiating the surface of a Silicon wafer with femtosecond laser pulses under certain circumstances, has unusual optical properties such as the strong absorption of light with wavelength from…
Electrically driven light sources are essential in a wide range of applications, from indication and display technologies to high-speed data communication and quantum information processing. Wide-bandgap semiconductors promise to advance…
We propose a back-reflecting scheme in order to enhance the maximum achievable current in one micron thick crystalline silicon solar cells. We perform 3-dimensional numerical investigations of the scattering properties of metallic…
\textit{DX} behavior limits $n$-type carrier concentrations in ultrawide-bandgap nitrides such as aluminum nitride (AlN) and cubic boron nitride ($c$-BN). Instead of acting as effective-mass donors, \textit{DX} centers capture two…
With an MBE technique, a Si/Ge heterostructures are prepared containing layers of nanostructured Ge with quantum dots of size of several nanometers. The effective conductivity of the layers is determined by a quasioptical…
The pair-production absorption of high-energy gamma-rays by intergalactic low-energy photons is expected to produce a high-energy cutoff in the spectra of extragalactic sources which is a sensitive function of redshift. We first discuss the…
The negatively charged silicon monovacancy $V_{Si}^-$ in 4H-silicon carbide (SiC) is a spin-active point defect that has the potential to act as a qubit or quantum memory in solid-state quantum computation applications. Photonic crystal…
We performed phase-sensitive terahertz (0.12 - 1.2 THz) transmission measurements of Ga-enriched layers in silicon. Below the superconducting transition, T_{c} = 6.7 K, we find clear signatures of the formation of a superconducting…