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Related papers: Possible atomic structures for the sub-bandgap abs…

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The in-plane and out-of-plane surface impedance and microwave conductivity components of one and the same YBa_2Cu_3O_{7-x} (0.07\le x\le 0.47) single crystal are determined in the wide ranges of temperature T and carrier concentration p in…

Superconductivity · Physics 2009-11-10 M. R. Trunin , Yu. A. Nefyodov , A. F. Shevchun

We demonstrate that absorption saturation of a mid-infrared intersubband transition can be engineered to occur at moderate light intensities of the order of 10-20 kW$.$cm$^{-2}$ and at room temperature. The structure consists of an array of…

Electron excitations at silicon and 3C-SiC surfaces caused by an intense femtosecond laser pulse can be calculated by solving the time-dependent density functional theory and the Maxwell's equation simultaneously. The energy absorption,…

Applied Physics · Physics 2019-08-16 Tomohito Otobe

Scanning tunneling spectroscopies in the subKelvin temperature range were performed on superconducting Silicon epilayers doped with Boron in the atomic percent range. The resulting local differential conductance behaved as expected for a…

We report on sub-bandgap optoelectronic phenomena of hydrogen-terminated diamond patterned with a submicron oxidized line. The line acts as an energy barrier for the two-dimensional hole gas located below the hydrogenated diamond surface. A…

Mesoscale and Nanoscale Physics · Physics 2015-05-18 M. Stallhofer , M. Seifert , M. Hauf , G. Abstreiter , M. Stutzmann , J. Garrido , A. W. Holleitner

The deposition of one silicon monolayer on the silver (111) substrate in the temperature range 150-300$^\circ$C, gives rise to a mix of (4$\times$4), ($2\sqrt{3}\times 2\sqrt{3}$)R30$^\circ$ and ($\sqrt{13}\times\sqrt{13}$)R13.9$^\circ$…

Materials Science · Physics 2015-06-04 H. Jamgotchian , Y. Colignon , N. Hamzaoui , B. Ealet , J. Y. Hoarau , B. Aufray , J. P. Bibérian

We investigate hyper-doping, a promising approach to introduce a high concentration of impurities into silicon beyond its solid solubility limit, for its potential applications in near-infrared plasmonics. We systematically explore the…

Embedded Si and Ge nanocrystals (NCs) in wide band-gap matrices are studied theoretically using an atomistic pseudopotential approach. From small clusters to large NCs containing on the order of several thousand atoms are considered.…

Materials Science · Physics 2007-11-27 C. Bulutay

The phenomenological boundary conditions for the envelope wave function, which is applicable for contacts of semiconductors with the rather different crystal symmetry are proposed. It is shown that the boundary conditions are determined by…

Materials Science · Physics 2008-02-03 Leonid S. Braginsky

We theoretically investigate the optical energy absorption of crystalline silicon subject to dual-color femtosecond laser pulses, using the time-dependent density functional theory (TDDFT). We employ the modified Becke-Johnson (mBJ)…

Plasma Physics · Physics 2022-11-30 Mizuki Tani , Kakeru Sasaki , Yasushi Shinohara , Kenichi L. Ishikawa

The absorption of thin hydrogenated amorphous silicon layers can be efficiently enhanced through a controlled periodic patterning. Light is trapped through coupling with photonic Bloch modes of the periodic structures, which act as an…

We used DFT to study the energetics of the decomposition of alane, AlH3, on the Si(001) surface, as the acceptor complement to PH3. Alane forms a dative bond with the raised atoms of silicon surface dimers, via the Si atom lone pair. We…

Materials Science · Physics 2017-09-13 Richard L. Smith , David R. Bowler

While Si clathrates have been explored as promising direct bandgap semiconductors, their practical optoelectronic performance has been limited by high doping levels and structural defects. Hydrogen has long been used to improve the…

Positive terahertz photoconductivity is observed at room temperature in CdHgTe thin films with different Cd contents. We show that electron gas heating caused by Drude-like absorption results in positive photoconductivity because of the…

Recent breakthroughs in cryogenic silicon detector technology allow for the observation of single electron-hole pairs released via particle interactions within the target material. This implies sensitivity to energy depositions as low as…

We report the observation of a phonon bottleneck effect impacting the thermal depopulation of photoexcited shallow defects in high-resistivity silicon. Using time-resolved terahertz (THz) spectroscopy, near-band-gap excitation produces a…

Materials Science · Physics 2025-11-25 Sergio Revuelta , Hai I. Wang , Mischa Bonn , Enrique Canovas

Flexoelectricity, an electromechanical coupling between strain gradient and polarization, offers a promising dimension to enrich silicon-based devices. Although the flexoelectricity of silicon is known, some fundamental aspects remain…

Materials Science · Physics 2025-06-26 Lingtong Lv , Qianqian Ma , Kailu Wang , Xin Wen , Shengping Shen

We suggest using an evanescent wave around a thin fiber to trap atoms. We show that the gradient force of a red-detuned evanescent-wave field in the fundamental mode of a silica fiber can balance the centrifugal force when the fiber…

Optics · Physics 2009-11-10 V. I. Balykin , K. Hakuta , Fam Le Kien , J. Q. Liang , M. Morinaga

We have carried out optical-absorption and reflectance measurements at room temperature in single crystals of AWO4 tungstates (A = Ba, Ca, Cd, Cu, Pb, Sr, and Zn). From the experimental results their band-gap energy has been determined to…

Materials Science · Physics 2009-11-13 R. Lacomba-Perales , J. Ruiz-Fuertes , D. Errandonea , D. Martinez-Garcia , A. Segura

A nonlocal energy-balance equation is derived for the optical absorption, photoluminescence and inelastic electron-phonon scattering, which determines the electron and hole temperatures for any given lattice temperature. The evolution of…

Other Condensed Matter · Physics 2007-05-23 Danhong Huang , T. Apostolova , P. M. Alsing , D. A. Cardimona
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