Related papers: Excitonic fine structure splitting in type-II quan…
We derive a general relation between the fine structure splitting (FSS) and the exciton polarization angle of self-assembled quantum dots (QDs) under uniaxial stress. We show that the FSS lower bound under external stress can be predicted…
We have studied theoretically the type-II GaAsSb capped InAs quantum dots for two structures differing in the composition of the capping layer, being either (i) constant or (ii) with Sb accumulation above the apex of the dot. We have found…
Exciton fine structures in cubic III-V semiconductor GaAs, InAs and GaN quantum dots are investigated systematically and the exciton spin relaxation in GaN quantum dots is calculated by first setting up the effective exciton Hamiltonian.…
The effcient generation of entangled photons at telecom wavelength is crucial for the success of many quantum communication protocols and the development of fiber-based quantum networks. Entangled light can be generated by solid state…
Hereby, we present a comprehensive experimental and theoretical study of the electronic structure and optical properties of excitonic complexes in strain-engineered InGaAs/GaAs quantum dots (QDs) grown by metal-organic chemical vapour…
We study the polarization response of the emission from type-II GaAsSb capped InAs quantum dots. The theoretical prediction based on the calculations of the overlap integrals of the single-particle states obtained in the k.p framework is…
InGaAs Quantum Dots embedded in GaAs barriers, grown in inverted tetrahedral recesses of 7 {\mu}m edge, have showed interesting characteristics in terms of uniformity and spectral narrowness of the emission. In this paper we present a study…
Excitons confined to flat semiconductor quantum dots with elliptical cross section are considered as we study geometrical effects on exciton binding energy, electron-hole separation, and the resulting linear optical properties. We use…
We report on optical investigations of MOVPE-grown InGaAs/GaAs quantum dots emitting at the telecom O-band that were integrated onto uniaxial piezoelectric actuators. This promising technique, which does not degrade the optical quality or…
We propose an effective model to describe the statistical properties of exciton fine structure splitting (FSS) and polarization angle of quantum dot ensembles (QDEs). We derive the distributions of FSS and polarization angle for QDEs and…
The optical properties of excitons confined in initially-unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasi-uniaxial stress. To allow the validation of state-of-the-art computational tools for describing the…
The fine structure of excited excitonic states in a quantum dot with an embedded magnetic ion is studied theoretically and experimentally. The developed theory takes into account the Coulomb interaction between charged carriers, the…
We have studied the variation in fine-structure splitting (FSS) under application of vertical electric field in a range of quantum dots grown by different methods. In each sample we confirm that this energy splitting changes linearly over…
We investigate the optical properties of InAs quantum dots grown by molecular beam epitaxy on GaAs(110) using Bi as a surfactant. The quantum dots are synthesized on planar GaAs(110) substrates as well as on the {110} sidewall facets of…
We derive analytically the change of exciton fine structure splitting (FSS) under the external stresses in the self-assembled InAs/GaAs quantum dots using the Bir-Pikus model. We find that the FSS change is mainly due to the strain induced…
Single lateral InGaAs quantum dot molecules have been embedded in a planar micro-cavity in order to increase the luminescence extraction efficiency. Using a combination of metal-organic vapor phase and molecular beam epitaxy samples could…
A comprehensive study of the exchange interaction between charge carriers in self-organized InAs/GaAs quantum dots is presented. Single quantum-dot cathodoluminescence spectra of quantum dots of different sizes are analyzed. Special…
We report on the optical properties of single InAs/GaAs quantum dots emitting near the telecommunication O-band, probed via Coulomb blockade and non-resonant photoluminescence spectroscopy, in the presence of external electric and magnetic…
We investigate polarization properties of neutral exciton emission in single self-assembled InAs/GaAs quantum dots. The in-plane shape and strain anisotropy strongly couple the heavy and light hole states and lead to large optical…
The demonstration of degeneracy of the exciton spin states is an important step towards the production of entangled photons pairs from the biexciton cascade. We measure the fine structure of exciton and biexciton states for a large number…