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Since de discovery of graphene, the family of 2-dimensional materials has attracted much recent attention. In this work, the nonlinear optical properties of few-layer MoS2 two-dimensional crystals are studied using femtosecond laser pulses.…

Mesoscale and Nanoscale Physics · Physics 2013-06-20 Leandro M. Malard , Thonimar V. Alencar , Ana Paula M. Barboza , Kin Fai Mak , Ana M. de Paula

Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented…

The physics of two-dimensional (2D) materials and heterostructures based on such crystals has been developing extremely fast. With new 2D materials, truly 2D physics has started to appear (e.g. absence of long-range order, 2D excitons,…

Materials Science · Physics 2016-08-11 K. S. Novoselov , A. Mishchenko , A. Carvalho , A. H. Castro Neto

Strain induced through fabrication, both by patterning and capping, can be used to change the properties of two-dimensional (2D) materials or other thin films. Here, we explore how capping layers impart strain to monolayer MoS$_{2}$ using…

Tailoring magnetoresistance and magnetic anisotropy in van der Waals magnetic materials is essential for advancing their integration into technological applications. In this regard, strain engineering has emerged as a powerful and versatile…

We propose an approach for exploiting machine learning to approximate electronic fields in crystalline solids subjected to deformation. Strain engineering is emerging as a widely used method for tuning the properties of materials, and this…

Materials Science · Physics 2021-12-28 Ying Shi Teh , Swarnava Ghosh , Kaushik Bhattacharya

Strain engineering is a vital way to manipulate the electronic properties of two-dimensional (2D) materials. As a typical representative of transition metal mono-chalcogenides (TMMs), a honeycomb CuSe monolayer features with one-dimensional…

Materials Science · Physics 2022-11-08 Gefei Niu , Jianchen Lu , Jianqun Geng , Shicheng Li , Hui Zhang , Wei Xiong , Zilin Ruan , Yong Zhang , Boyu Fu , Lei Gao , Jinming Cai

The search for half-metals and spin-gapless semiconductors has attracted extensive attention in material design for spintronics. Existing progress in such a search often requires peculiar atomistic lattice configuration and also lacks…

Mesoscale and Nanoscale Physics · Physics 2016-03-02 Shuze Zhu , Teng Li

Phosphorene is a single elemental two-dimensional semiconductor that has quickly emerged as a high mobility material for transistors and optoelectronic devices. In addition, being a 2D material, it can sustain high levels of strain,…

Mesoscale and Nanoscale Physics · Physics 2019-07-09 S. J. Ray , M. Venkata Kamalakar

The production of new sensors, transducers and electronic components can benefit from the possibility to alter the electronic transport of metal-semicondutor-metal (MSM) devices. 2D materials are extremely appealing for those new…

Materials Science · Physics 2018-07-04 Igor Neri , Miquel López-Suárez

Two-dimensional transition metal dichalcogenide semiconductors are intriguing hosts for quantum light sources due to their unique opto-electronic properties. Here we report that strain gradients induced by substrate patterning result in…

Mesoscale and Nanoscale Physics · Physics 2016-10-11 Santosh Kumar , Artur Kaczmarczyk , Brian D. Gerardot

Two dimensional (2D) van der Waals (vdW) magnetic semiconductors are a new class of quantum materials for studying the emergent physics of excitons and spins in the 2D limit. Twist engineering provides a powerful tool to manipulate the…

Strain engineering is used to obtain desirable materials properties in a range of modern technologies. Direct nanoscale measurement of the three-dimensional strain tensor field within these materials has however been limited by a lack of…

First-principles calculations, within the framework of density functional theory, have been performed on the well-studied 2H and the less explored 1T$^{\prime}$ phase of single-layer MoS$_{2}$. We have addressed the strain-induced…

Materials Science · Physics 2023-03-01 Saumen Chaudhuri , A. K. Das , G. P. Das , B. N. Dev

Rock-salt chalcogenide SnTe represents the simplest realization of a topological insulator where a crystal symmetry allows for the appearence of topologically protected metallic states with an even number of Dirac cones on high-symmetry…

Materials Science · Physics 2013-10-09 Paolo Barone , Domenico Di Sante , Silvia Picozzi

Two dimensional (2D) layered materials have recently gained renewed interest due to their exotic electronic properties along with high specific surface area. The prospects of exploiting these properties in sensing, catalysis, energy…

Materials Science · Physics 2015-05-20 Sumit Saxena , Raghvendra Pratap Choudhary , Shobha Shukla

Polar topological structures in ferroelectric thin films have recently drawn significant interest due to their fascinating physical behaviors and promising applications in high-density nonvolatile memories. However, most polar topological…

Materials Science · Physics 2024-02-26 Bo Xu , Zhanpeng Gong , Jingran Liu , Yunfei Hong , Yang Yang , Lou Li , Yilun Liu , Junkai Deng , Jefferson Zhe Liu

Local strain engineering is a promising technique to tune the properties of two-dimensional materials at the nanoscale. However, many existing methods are static and limit the systematic exploration of strain-dependent material behavior.…

Materials Science · Physics 2025-07-11 Eric Herrmann , Zhixiang Huang , Sai Rahul Sitaram , Ke Ma , S M Jahadun Nobi , Xi Wang

2D materials with nontrivial energy bands are highly desirable for exploring various topological phases of matter, as low dimensionality opens unprecedented opportunities for manipulating the quantum states. Here, it is reported that…

Mesoscale and Nanoscale Physics · Physics 2020-01-17 Chenqiang Hua , Si Li , Zhu-An Xu , Yi Zheng , Shengyuan A. Yang , Yunhao Lu

The transition-metal dichalcogenides (TMD) MoS2 and WS2 show remarkable electromechanical properties. Strain modifies the direct band gap into an indirect one, and substantial strain even induces an semiconductor-metal transition. Providing…

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