Related papers: Optical loss by surface transfer doping in silicon…
Silicon is an extremely attractive material platform for integrated optics at telecommunications wavelengths, particularly for integration with CMOS circuits. Developing detectors and electrically pumped lasers at telecom wavelengths are…
The absorption of light by free carriers in semiconductors results in optical loss for all photon wavelengths. Since free-carrier absorption competes with optical transitions across the band gap, it also reduces the efficiency of…
We theoretically characterize the free-carrier plasma dispersion effect in fully-etched silicon waveguides, with various dielectric material claddings, due to fixed and interface charges at the silicon-dielectric interfaces. The values used…
We fabricate silicon waveguides in silicon-on-insulator (SOI) wafers clad with either silicon dioxide, silicon nitride, or aluminum oxide, and by measuring the electro-optic behavior of ring resonators, we characterize the…
In this paper we report suspended silicon waveguides operating at a wavelength of 7.67 mm with a propagation loss of 3.1 ? 0.3 dB/cm. To our knowledge this is the first demonstration of low loss silicon waveguides at such a long wavelength,…
Optical waveguides, covered with thin films, which transmittance can be controlled by external action, are widely used in various applications from optical modulators to saturable absorbers. It is natural to suggest that the waveguide…
In this paper, we report on the optical absorption in porous silicon. We model the absorption process assuming that porous silicon is a pseudo 1D material system having a distribution of band gaps. We show that in order to explain the…
In this paper, we analyse the optical absorption in porous silicon . This is the first attempt to explicitly demonstrate that it is not possible to extract the band gap of such low dimensional nanostructures like porous silicon from a Tauc…
The need for semiconductor technology for crystalline silicon of the highest purity and homogeneity has provided samples exhibiting low optical absorption in the infrared range. Such silicon has become the basis for photonic elements in the…
We report record low loss silicon-on-sapphire nanowires for applications to mid infrared optics. We achieve propagation losses as low as 0.8dB/cm at 1550nm, 1.1 to 1.4dB/cm at 2080nm and < 2dB/cm at = 5.18 microns.
We for the first time provide an analytic solution for pulse propagation and phase sensitive amplification in the regime of high nonlinearity in silicon waveguides including two-photon absorption (TPA) and free carriers. Our analytic…
In this work, we demonstrate compact paper-clip spiral silicon photonic waveguides with ultra-low delay loss. We characterize the optical loss and group delay of single-mode and multi-mode silicon waveguides across the telecom O-, S-, C-,…
Encapsulation layers are explored for passivating the surfaces of silicon to reduce optical absorption in the 1500-nm wavelength band. Surface-sensitive test structures consisting of microdisk resonators are fabricated for this purpose.…
The maximum bit-rate of a slab waveguide is ultimately determined by the waveguide dispersion. We show that while the maximum bit rate in a waveguide is inversely proportional to the waveguide's width, bit rate per unit width (i.e., spatial…
We show that single mode Si waveguides efficiently sustain high-speed transmissions at 2 $\mu$m. We report the transmission of a 10 Gbit/s signal over 7 cm with a power penalty below 1 dB. Parametric conversion in the continuous wave regime…
Broadband mid-infrared light sources are highly desired for wide-ranging applications that span free-space communications to spectroscopy. In recent years, silicon has attracted great interest as a platform for nonlinear optical wavelength…
The silicon/silicon dioxide (Si/SiO2) interface plays a crucial role in the performance, cost, and reliability of most modern microelectronic devices, from the basic transistor to flash memory, digital cameras, and solar cells. Today the…
We report on spectroscopy results from the mid- to far-infrared on wafer-scale graphene, grown either epitaxially on silicon carbide, or by chemical vapor deposition. The free carrier absorption (Drude peak) is simultaneously obtained with…
Free carrier capture by a screened Coulomb potential in semiconductors are considered. It is established that with decreasing screening radius the capture cross section decreases drastically, and it goes to zero when $% r_s=a_B^{*}$. On the…
Low-loss single-mode optical waveguide fabrication process in extra-white soda-lime glass is demonstrated. Waveguiding structures are formed in bulk substrates employing femtosecond laser writing technology. The combination of a slit…