Related papers: Dielectric Sensing with Back-Gated Nanowires
PtSe$_2$ is a promising 2D material for nanoelectromechanical sensing and photodetection in the infrared regime. One of its most compelling features is the facile synthesis at temperatures below 500 {\deg}C, which is compatible with current…
Dielectric screening plays a vital role for the physical properties in the nanoscale and also alters our ability to detect and characterize nanomaterials by optical techniques. We study the dielectric screening inside of carbon nanotubes…
Total capacitance of a dielectric filled circular disc configuration (radius r and separation d) has been numerically evaluated over relative permittivities ranging from 1 to 80 and aspect ratios ranging from 0.001 to 10. A new perspective…
We present first-principles calculations on electron transport through Na nanowires at finite bias voltages. The nanowire exhibits a nonlinear current-voltage characteristic and negative differential conductance. The latter is explained by…
We predict that conduction electrons in a semiconductor film containing a centered square array of metal nanowires normal to its plane are bound in quantum states around the central wires, if a positive bias voltage is applied between the…
High temperature cuprate superconductors exhibit extremely local nanoscale phenomena and strong sensitivity to doping. While other experiments have looked at nanoscale interfaces between layers of different dopings, we focus on the…
We propose the use of superconducting nanowires as both target and sensor for direct detection of sub-GeV dark matter. With excellent sensitivity to small energy deposits on electrons, and demonstrated low dark counts, such devices could be…
Artificial metasurfaces are capable of completely manipulating the phase, amplitude, and polarization of light with high spatial resolutions. The emerging design based on high-index and low-loss dielectrics has led to the realization of…
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon…
During the dielectric breakdown process of thin solid-state nanopores, the application of high voltages may cause the formation of multi-nanopores on one chip, which number and sizes are important for their applications. Here, simulations…
We develop a generalized grand canonical potential for the ballistic nonequilibrium electron distribution in a metal nanowire with a finite applied bias voltage. Coulomb interactions are treated in the self-consistent Hartree approximation,…
Highly efficient and widely applicable working mechanisms that allow nanomaterials and devices to respond to external stimuli with controlled mechanical motions could make far-reaching impact to reconfigurable, adaptive, and robotic…
Solution processed field-effect transistors based on single crystalline silicon nanowires (Si NWs) with metal Schottky contacts are demonstrated. The semiconducting layer was deposited from a nanowire ink formulation at room temperature.…
The interaction between light and matter can be enhanced by spatially concentrating the light field to boost the photon energy density and increasing the photon dwell time to prolong energy transfer between light and matter. Traditionally,…
Nanotechnology enables in principle a precise mapping from design to device but relied so far on human intuition and simple optimizations. In nanophotonics, a central question is how to make devices in which the light-matter interaction…
We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as…
The electronic structure of nanocylinder without and with a small perturbation is investigated with the help of calculation of the local density of states. A continuum gauge field-theory model is used for this purpose. In this model, Dirac…
The capacitance of an arbitrarily shaped object is calculated with the same second-kind integral equation method used for computing static and dynamic polarizabilities. The capacitance is simply the dielectric permittivity multiplied by the…
The conductance change of nanowire field-effect transistors is considered a highly sensitive probe for surface charge. However, Debye screening of relevant physiological liquid environments challenge device performance due to competing…
The pressing quest for overcoming Boltzmann tyranny in low-power nanoscale electronics revived the thoughts of engineers of early 1930-s on the possibility of negative circuit constants. The concept of the ferroelectric-based negative…