Related papers: Electron mobility in InxGa1-xN channel HEMTs
We have considered the conductivity properties of a two dimensional electron gas (2DEG) in two different kinds of inhomogeneous magnetic fields, i.e. a disordered distribution of magnetic flux vortices, and a periodic array of magnetic flux…
Electron transport studies for AlGaN/GaN two-dimensional electron gases is presented. Novel defects in the III-V nitrides are treated theoretically for two-dimensional transport. Theory of electron scattering by charged dislocation lines is…
In this paper, physics-based analytical models using two-dimensional (2D) Poisson equations for surface potential, channel potential, electric field, and drain current in AlN/$\beta$-Ga$_2$O$_3$ high electron mobility transistor (HEMT) is…
A decade of intense research on two-dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum…
The two-dimensional electron gas residing in shallow InAs quantum wells coupled to epitaxial aluminum is a widely utilized platform for exploration of topological superconductivity. Strong spin-orbit coupling, large effective $g$-factor,…
We study plasma effects in a micromachined high-electron mobility transistor (HEMT) with the microcantilever serving as the gate using the developed a model. The model accounts for mechanical motion of the microcantilever and…
We use first-principles electronic-structure theory to determine the intra- and inter-valley electron-alloy scattering parameters in n-type GeSn alloys. These parameters are used to determine the alloy scattering contributions to the n-type…
Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodetectors. The wide bandgap energy and the predicted high…
GaN high electron mobility transistors (HEMT) have gained some foothold in the power electronics industry due to wide frequency bandwidth and power handling. The material offers a wide bandgap and higher critical field strength compared to…
We discuss the effect of the dielectric environment (insulators and metal gates) on electronic transport in two-dimensional (2D) transition metal dichalcogenides (TMD) monolayers. We employ well-known ab initio methods to calculate the…
Development of new, high quality functional materials has been at the forefront of condensed matter research. The recent advent of two-dimensional black phosphorus has greatly enriched the material base of two-dimensional electron systems.…
Measurements of low-frequency transconductance dispersion at different temperatures and conductance deep level transient spectroscopic(CDLTS) studies of an AlGaAs/InGaAs pseudomorphic HEMT were carried out. The experimental results show the…
The quasi two-dimensional electron gas (q-2DEG) at oxide interfaces provides a platform for investigating quantum phenomena in strongly correlated electronic systems. Here, we study the transport properties at the high-mobility…
Two-dimensional electron gas (2DEG) formed at the interface between two insulating oxides offers an opportunity for fundamental research and device applications. Binary alkaline earth metal oxides possess compatible lattice constants with…
Electron-phonon(e-ph) interaction in Ca2N monolayer, the first electrene material with two-dimensional(2D) electron gas floating in free space, is expected to be very weak and such a character can be used to design weak-scattering transport…
We report transport measurements of electrons on helium in a microchannel device where the channels are 200 nm deep and 3 $\mu$m wide. The channels are fabricated above amorphous metallic Ta$_{40}$W$_{40}$Si$_{20}$, which has surface…
We report the observation of a metal-insulator transition in a two-dimensional electron gas in silicon. By applying substrate bias, we have varied the mobility of our samples, and observed the creation of the metallic phase when the…
We calculate using the Boltzmann transport theory the density dependent mobility of two-dimensional (2D) electrons in GaAs, SiGe and AlAs quantum wells as well as of 2D holes in GaAs quantum wells. The goal is to precisely understand the…
The depth distribution of the transport properties as well as the temperature dependence of the low field magneto-conductance for several c-axis oriented GaN nanowall network samples grown with different average wall-widths are…
We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe$_2$) using high work-function platinum source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A device…