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The latest generation of transistors are nanoscale devices whose performance and reliability are limited by thermal noise in low-power applications. Therefore developing efficient methods to compute the voltage and current fluctuations in…
New electrode materials for alkaline-ion batteries are a timely topic. Among many promising candidates, V2O5 is one of the most interesting cathode materials. While having very high theoretical capacity, in practice, its performance is…
The control over material properties attainable through molecular doping is essential to many technological applications of organic semiconductors, such as OLED or thermoelectrics. These excitonic semiconductors typically reach the…
2D material based tunnel FETs are among the most promising candidates for low power electronics applications since they offer ultimate gate control and high current drives that are achievable through small tunneling distances during the…
Recently, the statistical properties of empirical Entropic Optimal Transport (EOT) have attracted great interest, as this quantity has been shown to be useful for complex data analysis, among other reasons due to its computational…
The capability to isolate one to few unit-cell thin layers from the bulk matrix of layered compounds opens fascinating prospects to engineer novel electronic phases. However, a comprehensive study of the thickness dependence and of…
The evolution of the electronic structures of strongly correlated insulators with doping has long been a central fundamental question in condensed matter physics; it is also of great practical relevance for applications. We have studied the…
Fault tolerance is a prerequisite for scalable quantum computing. Architectures based on 2D topological codes are effective for near-term implementations of fault tolerance. To obtain high performance with these architectures, we require a…
We present a physics-based circuit-compatible model for pH-sensitive field-effect transistors based on two-dimensional (2D) materials. The electrostatics along the electrolyte-gated 2D-semiconductor stack is treated by solving the Poisson…
Thermoelectric materials are opening a promising pathway to address energy conversion issues governed by a competition between thermal and electronic transport. Improving the efficiency is a difficult task, a challenge that requires new…
In this paper, a two-dimensional analytical model of a laterally graded-channel triple-metal double-gate Junctionless Field Effect Transistor with hetero dielectric gate oxide stack consisting of SiO$_2$ and HfO$_2$ is derived. The model…
The superconducting ground state in many two-dimensional materials can be created or destroyed through quantum phase transitions (QPTs) controlled by non-thermal parameters such as carrier density or magnetic field. While various mechanisms…
Through the introduction of a new electron spin transport mechanism, a 2D donor electron spin quantum computer architecture is proposed. This design addresses major technical issues in the original Kane design, including spatial…
Interpreting measurements requires a physical theory, but the theory's accuracy may vary across the experimental domain. To optimize experimental design, and so to ensure that the substantial resources necessary for modern experiments are…
The transition between the two phases of 4D Euclidean Dynamical Triangulation [1] was long believed to be of second order until in 1996 first order behavior was found for sufficiently large systems [5,9]. However, one may wonder if this…
This paper addresses the problem of estimating entropy-regularized optimal transport (EOT) maps with squared-Euclidean cost between source and target measures that are subGaussian. In the case that the target measure is compactly supported…
In a recent Letter Simon and Lee suggested a scaling law for thermodynamic and kinetic properties of superconductors with lines of gap nodes. However their crossover parameter between the bulk dominated regime and the vortex dominated…
Two dimensional (2D) crystal heterostructures are shown to possess a unique opportunity for novel THz nonlinear devices. In contrast to the oxide tunneling barrier, the uniformity of 2D insulators in the thickness control provides an ideal…
The effect of an electric field on conduction in a disordered system is an old but largely unsolved problem. Experiments cover an wide variety of systems - amorphous/doped semiconductors, conducting polymers, organic crystals, manganites,…
The recent demonstration of resonant tunneling transport in nitride semiconductors has led to an invigorated effort to harness this quantum transport regime for practical applications. In polar semiconductors, however, the interplay between…