Related papers: Different shapes of impurity concentration profile…

We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…

We have performed a systematic first-principles computational study of the effects of impurity atoms (boron, carbon, nitrogen, oxygen, silicon, phosporus, and sulfur) on the orbital hybridization and bonding properties in the intermetallic…

Germanium single crystal having 45 mm diameter and 100 mm length of 7N+ purity has been grown by Czochralski method. Structural quality of the crystal has been characterized by Laue diffraction. Electrical conduction and Hall measurements…

The phase behavior of hard rectangular rods with length L and diameter D is studied in a narrow slit-like pore using the Parsons-Lee density functional theory. Using the restricted orientation approximation, we find strong adsorption at the…

We study the effects of an integrable impurity in a periodic t-J chain. The impurity couples to both spin and charge degrees of freedom and has the interesting feature that the interaction with the bulk can be varied continuously without…

While standard scaling arguments show that a system of non-interacting electrons in two dimensions and in the presence of uncorrelated disorder is insulating, in this work we discuss the case where inter-impurity correlations are included.…

Context. The level of porosity of interstellar ices - largely comprised of amorphous solid water (ASW) - contains clues on the trapping capacity of other volatile species and determines the surface accessibility that is needed for solid…

A previous publication has shown that the in-plane polarization (IPP) component of a polarized 0.97-GeV/c deuteron beam in the COSY storage ring may acquire a polarization half-life in excess of 1000 s through a combination of beam…

Short nanopores find extensive applications capitalizing on their high throughput and detection resolution. Ionic behaviors through long nanopores are mainly determined by charged inner-pore walls. When pore lengths decrease to sub-200 nm,…

We show that the optical and electronic properties of nanocrystalline silicon can be efficiently tuned using impurity doping. In particular, we give evidence, by means of ab-initio calculations, that by properly controlling the doping with…

We present a detailed study, within the mean-field approximation, of an impurity band model for III-V diluted magnetic semiconductors. Such a model should be relevant at low carrier densities, below and near the metal-insulator transition.…

We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. In a range of doping concentration between around 2.1 and 8.7 x 1017 cm-3, we find that a…

The requirement of intermediate line component in the recently observed spectra of several AGNs points to possibility of the existence of a physically separate region between broad line region (BLR) and narrow line region (NLR). In this…

Secondary Ions Mass Spectroscopy and Hall effect measurements were performed on boron doped silicon with concentration between 0.02 at.% and 12 at.%. Ultra-high boron doping was made by saturating the chemisorption sites of a Si wafer with…

The assimilation of ablated high-Z impurities into the hot surrounding plasma along the magnetic field is investigated by first-principles kinetic simulations. It is found that the assimilated impurity ions, primarily driven by the…

This work reports on the effect of high temperature annealing on the electrical properties of p-type implanted 4H-SiC. Ion implantations of Aluminium (Al) at different energies (30 - 200 keV) were carried out to achieve 300 nm thick…

Impurity temperature screening is a favorable neoclassical phenomenon involving an outward radial flux of impurity ions from the core of fusion devices. Quasisymmetric magnetic fields are intrinsically ambipolar and give rise to temperature…

We emphasize that the completeness of the partition function, that is, the use of a converged partition function at the typical temperature range of the survey, is very important to decrease the uncertainty on this quantity and thus to…

As it is known from visible light experiments, silicon under femtosecond pulse irradiation can undergo the so-called 'nonthermal melting' if the density of electrons excited from the valence to the conduction band overcomes a certain…

Amorphous grain-boundary (GB) complexions in thermally stable nanocrystalline alloys are commonly assumed to be structurally homogeneous, yet their disordered nature makes them susceptible to local short-range ordering (SRO). The influence…